Fuse construction for integrated circuit structure having low dielectric constant dielectric material

An integrated circuit structure which includes fuses formed over a low k dielectric layer in said integrated circuit structure, said integrated circuit structure comprising:

• a) a layer of low k dielectric material formed over portions of said integrated circuit structure;
• b) first openings formed in an upper surface of said layer of low k dielectric material;
• c) a first conductive barrier material formed over the upper surfaces of said first openings;
• d) a filler metal on said first conductive barrier material, which filler metal fills said lined openings to form metal interconnects in said upper surface of said layer of low k dielectric material;
• e) a first dielectric layer formed over said layer of low k dielectric material and over said metal interconnects in said upper surface of said layer of low k dielectric material;
• f) second openings formed in said first dielectric layer in a pattern wherein said second openings communicate with said metal interconnects in said first openings in said layer of low k dielectric material;
• g) a second conductive barrier layer formed over said first dielectric layer and in contact with said metal interconnects exposed by said patterning of said first dielectric layer, said second conductive barrier layer comprising:
• i) fuse portions formed between at least some of said metal interconnects;
• and
• ii) a liner of conductive barrier material formed over one or more of said metal interconnects to provide a barrier between subsequent layers and copper filler material in said metal interconnects beneath said second conductive barrier layer;
• and
• h) a second dielectric layer formed over said patterned conductive barrier layer to thereby form a window of second dielectric material above each of said fuse portions.