Method of manufacturing semiconductor device including a step of forming element isolation trench and semiconductor device
AssigneeRenesas Technology Corp.
InventorKazuo Tomita
Life of this patent
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Abstract
An element isolation trench is formed in a mark section of a substrate. Further, an element isolation dielectric film is formed in the element isolation trench. An etch stopper film formed from a silicon nitride film is formed so as to cover at least a portion of the surface of an element isolation dielectric film formed in the mark section. Circuit elements are formed in a circuit section of the substrate while the etch stopper film formed in the mark section is used as an inspection mark.
Claims6
A semiconductor device having a substrate on which are provided a mark section and a circuit section, the circuit section including an element isolation region for isolating an active region, the device comprising:
- an element isolation trench formed in the mark section;
- an element isolation dielectric film formed in said element isolation trench;
- an etch stopper film covering at least a portion of the surface of said element isolation dielectric film;
- an interlayer dielectric film formed over art entire surface of the substrate;
- a contact hole extending from the surface of said interlayer dielectric film to the surface of the etch stopper film or to the surface of the substrate through the etch stopper film;
- and
- circuit elements formed in the circuit section by using said etch stopper film formed in the mark section as an inspection mark.
Dependencies are inferred from the claim text.