Electronic device having a filled dielectric medium
AssigneeMotorola, Inc.
InventorsJie Zhang, Anindya Dasgupta, Daniel Gamota
Life of this patent
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Abstract
A solid state electronic device consists of a bottom electrode (10) and a top electrode (20) with a dielectric layer (30) sandwiched in between. In one example, the dielectric layer is aluminum oxide. Microscopic voids or pinholes (40) in the aluminum oxide layer are filled with an electrically nonconductive material (50) to prevent current leakage between the two electrodes, and the addition of the electrically nonconductive material increases the performance of the device. The electrically nonconductive material can be p-nitroaniline, polyvinyl phenol, epoxy, polyurethane, polyacrylate, polyvinyl alcohol, titanium dioxide, barium titanate, oxides of aluminum, and oxides of silicon.
Claims27
A solid state electronic device, comprising:
- a first electrode;
- a dielectric layer deposited on at least a portion of the first electrode, said dielectric layer having a plurality of microscopic voids therein;
- a second electrode, deposited on at least a portion of the dielectric layer;
- and
- wherein at least a portion of the plurality of microscopic voids in the dielectric layer are filled with an electrically nonconductive material sufficient to prevent electrical conduction through the dielectric layer from the first electrode to the second electrode.
A solid state electronic device, comprising:
- a first electrode;
- a polymeric dielectric layer deposited on at least a portion of the first electrode, said polymeric dielectric layer having a plurality of microscopic voids therein;
- a second electrode, deposited on at least a portion of the polymeric dielectric layer;
- and
- wherein at least a portion of the plurality of microscopic voids in the polymeric dielectric layer are filled with an electrically nonconductive material selected from the group consisting of p-nitroaniline, polyvinyl phenol, epoxy, polyurethane, polyacrylate, polyvinyl alcohol, titanium dioxide, barium titanate, oxides of aluminum, and oxides of silicon, sufficient to prevent electrical conduction through the polymeric dielectric layer from the first electrode to the second electrode.
A solid state electronic device, comprising:
- a first electrode;
- a metal oxide layer selected from the group consisting of oxides of lithium, beryllium, sodium, magnesium, aluminum, silicon, potassium, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, indium, tin, antimony, tantalum, tungsten, lead, and bismuth, deposited on at least a portion of the first electrode, said metal oxide layer having a plurality of microscopic voids therein;
- a second electrode, deposited on at least a portion of the metal oxide layer;
- and
- wherein at least a portion of the plurality of microscopic voids in the metal oxide layer are filled with an electrically nonconductive material selected from the group consisting of p-nitroaniline, polyvinyl phenol, epoxy, polyurethane, polyacrylate, polyvinyl alcohol, titanium dioxide, barium titanate, oxides of aluminum, and oxides of silicon, sufficient to prevent electrical conduction through the metal oxide layer from the first electrode to the second electrode.
A solid state electronic device, comprising:
- a first electrode deposited on a substrate;
- an aluminum oxide layer deposited on at least a portion of the first electrode, said aluminum oxide layer having a plurality of microscopic voids therein;
- a second electrode, deposited on at least a portion of the aluminum oxide layer;
- and
- wherein at least a portion of the microscopic voids in the aluminum oxide are filled with an electrically nonconductive material selected from the group consisting of p-nitroaniline, polyvinyl phenol, epoxy, polyurethane, polyacrylate, polyvinyl alcohol, titanium dioxide, barium titanate, oxides of aluminum, and oxides of silicon, sufficient to prevent electrical conduction through the aluminum oxide layer from the first electrode to the second electrode.
A field effect transistor, comprising:
- a gate electrode deposited on a substrate;
- an aluminum oxide layer deposited on at least a portion of the gate electrode, said aluminum oxide layer having a plurality of microscopic voids therein;
- source and drain electrodes, deposited on at least a portion of the aluminum oxide layer;
- and
- wherein at least some of the microscopic voids in the aluminum oxide layer are filled with an electrically nonconductive material sufficient to prevent electrical conduction through the aluminum oxide layer from the gate electrode to the source and drain electrodes.
Dependencies are inferred from the claim text.