SOI semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorToshiyuki Nakamura
Life of this patent
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Abstract
The present invention aims to provide a field effect transistor which inhibits an aggregation of silicon atoms attendant on heat treatment and has stable source/drain shapes. The field effect transistor according to the present invention is manufactured using a substrate on which a silicon layer, an buried oxide film (BOX film) and an SOI layer are stacked in order. The field effect transistor has an element isolation layer formed in the SOI layer and further includes visored portions provided so as to cover angular portions on the main surface side of an activation layer defined by the element isolation layer.
Claims16
A field effect transistor, comprising:
- a first semiconductor layer;
- a first insulating layer formed over said first semiconductor layer;
- a second semiconductor layer formed over said first insulating layer;
- an element isolation layer formed in said second semiconductor layer;
- and
- a second insulating layer formed on the element isolation layer and only a peripheral region of the second semiconductor layer so that the second insulating layer formed on the peripheral region of the second semiconductor layer restrains a migration of silicon atoms in the peripheral region of the semiconductor layer.
A field effect transistor, comprising:
- a first semiconductor layer;
- a first insulating film formed over said first semiconductor layer;
- a second semiconductor layer formed over said first insulating film;
- an element isolation region formed within said second semiconductor layer;
- and
- a second insulating film formed on the element isolation region and only a peripheral region of the second semiconductor layer so that the second insulating layer formed on the peripheral region of the second semiconductor layer restrains a migration of silicon atoms in the peripheral region of the semiconductor layer.
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film formed on the entire surface of the semiconductor substrate;
- a silicon on insulator (SOI) layer containing silicon formed on the first insulating layer;
- an isolation layer formed on the first insulating layer so that the SOI layer is isolated by the isolation layer;
- a second insulating layer formed on the isolation layer and only on a peripheral region of the SOI layer so as to restrain a silicon migration at the peripheral region of the SOI layer;
- and
- a semiconductor element formed on the SOI layer.
Dependencies are inferred from the claim text.