Semiconductor component with an increased breakdown voltage in the edge area

A semiconductor component, comprising:

• a semiconductor body having a front face, a rear face, and trenches formed therein, said trenches disposed at a distance from one another in a horizontal direction of said semiconductor body and extend in a vertical direction of said semiconductor body;
• and
• a cell array formed in said semiconductor body and having an edge area, a number of identically formed transistor cells, and at least one edge cell formed at said edge area of said cell array, each of said transistor cells having:
• a first connection zone of a first conductivity type disposed in an area of said rear face of said semiconductor body;
• a second connection zone of said first conductivity type disposed in an area of said front face of said semiconductor body;
• a channel zone of a second conductivity type disposed between said first connection zone and said second connection zone;
• at least one control electrode disposed in a respective one of said trenches extending in the vertical direction into said semiconductor body;
• and
• a first insulation layer insulating said control electrode from said semiconductor body;
• said edge cell including:
• a field plate disposed in another one of said trenches being an edge trench extending in the vertical direction into said semiconductor body;
• and
• a second insulation layer insulating said field plate from said semiconductor body, a first distance between said edge trench of said edge cell and said respective trench of an immediately adjacent one of said transistor cells being less than a second distance between said respective trench of said immediately adjacent one of said transistor cells and a further respective trench of a further immediately adjacent one of said transistor cells in said cell array.