Phase-changeable memory devices having phase-changeable material regions with lateral contacts and methods of fabrication therefor

A phase-changeable memory device structure comprising:

• a pair of conductive patterns spaced apart from each other on the same plane;
• a variable resistor pattern disposed between the pair of conductive patterns so as to be in direct contact with opposing sidewalls of the conductive patterns at active contact areas;
• an upper metal interconnection disposed over the conductive patterns and the variable resistor pattern, wherein the upper metal interconnection is electrically connected to one conductive pattern;
• and
• a semiconductor substrate disposed below the conductive patterns and the variable resistor pattern, wherein the semiconductor substrate has an impurity diffusion region that is electrically connected to the other conductive pattern.

A phase-changeable memory device structure comprising:

• a phase-changeable material pattern having active contact areas at both sides thereof;
• a pair of conductive patterns disposed symmetrically on the same plane as the phase-changeable material pattern, wherein the conductive patterns are in direct contact with the active contact areas of the phase-changeable material pattern;
• an upper insulating layer disposed on the phase-changeable material pattern and the conductive patterns;
• a bit line disposed on the upper insulating layer, wherein the bit line is electrically connected to one conductive pattern through an upper contact plug penetrating the upper insulating layer;
• a lower insulating layer disposed under the phase-changeable material pattern and the conductive patterns;
• and
• a semiconductor substrate having a source region electrically connected to the other conductive pattern through a lower contact plug penetrating the lower insulating layer.

A phase-changeable memory device structure comprising:

• a phase-changeable material pattern having active contact areas at both sides thereof;
• a first electrode pattern disposed on the same plane as the phase-changeable material pattern, wherein the first electrode pattern is in contact with one active contact area;
• a second electrode pattern disposed on the same plane as the phase-changeable material pattern, wherein the second electrode pattern is in contact with the other active contact area;
• a resistance detection interconnection electrically connected to the second electrode interconnection;
• and
• a semiconductor substrate including an impurity diffusion region electrically connected to the first electrode interconnection.