Method of making transistors
Assignee3M Innovative Properties Company
InventorsSteven D. Theiss, Michael A. Haase, Silva K. Theiss
Life of this patent
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Abstract
A method for making transistors comprises depositing source electrode and drain electrode features onto a substrate through a single aperture in a stationary shadow mask, said aperture having at least two opposing edges; wherein the shapes of the features are defined by the aperture and location of source materials in relation to the substrate.
Claims23
An article comprising gate electrode, gate dielectric, source electrode, and drain electrode features, a semiconductor layer, a substrate, and a shadow mask comprising an aperture;
- wherein said shadow mask is permanently affixed to said substrate and said source and drain electrode features are defined by said aperture.
The article of 1 wherein the substrate is flexible.
An article comprising gate electrode, gate dielectric, source electrode, and drain electrode features, a first semiconductor feature, a second semiconductor feature, a substrate, and a shadow mask comprising an aperture;
- wherein said shadow mask is permanently affixed to said substrate, said semiconductor features are defined by said aperture, and at least a portion of each said semiconductor feature does not overlap the other semiconductor feature.
Dependencies are inferred from the claim text.