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US 6,806,517 B2Granted
Flash memory having local SONOS structure using notched gate and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSang Su Kim, Nae-In Lee, Geum-Jong Bae, Ki Chul Kim, Hwa Sung Rhee
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Abstract
A notched gate SONOS transistor includes: a substrate having source/drain regions; a gate insulator layer on the substrate between the source/drain regions; a notched gate structure, on the gate insulator leyer, having at least one notch; and at least one ONO wedge structure in the at least one notch, respectively, of the gate structure.
Claims20
A notched gate SONOS transistor comprising:
- a substrate having source/drain regions;
- a gate insulator layer on the substrate between the source/drain regions;
- a notched gate structure, on the gate insulator layer, having at least one notch;
- and
- at least one ONO wedge structure in the at least one notch, respectively, of the gate structure.
2 more elements
A method of making a notched gate arrangement for a SONOS transistor, the method comprising:
- providing a substrate;
- forming a gate insulator layer on the substrate;
- forming a notched gate structure, on the gate insulator layer, having at least one notch;
- and
- forming at least one ONO wedge structure in the at least one notch, respectively, of the gate structure.
2 more elements
Dependencies are inferred from the claim text.