Light-emitting semiconductor potting composition and light-emitting semiconductor device
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsMasachika Yoshino, Toshio Shiobara
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsMasachika Yoshino, Toshio Shiobara
Estimating the term…
A potting composition comprising (A) an organopolysiloxane having a vinyl group at an end of its molecular chain, (B) an organohydrogenpolysiloxane, (C) a platinum group metal catalyst, and optionally, (D) an organosilicon compound having a silicon atom-bonded alkoxy group. The cured product of the composition has a refractive index of 1.41-1.56 at 25° C. and 589 nm (sodium D line). The composition is suited for the embedment and protection of light-emitting semiconductor members. A package in which a light-emitting semiconductor member is embedded and protected with the potting composition undergoes little discoloration and maintains a high emission efficiency in heating tests, thus offering a light-emitting semiconductor device featuring a long life and energy saving.
A light-emitting semiconductor potting composition comprising
Dependencies are inferred from the claim text.
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Encapsulations: characterised by their material, e.g. epoxy or silicone resins
Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with…
Polysiloxanes: containing silicon bound to hydrogen
Containing silicon bound to oxygen-containing groups: to alkoxy or aryloxy groups
Term ended 11 Mar 2024 (estimated)
1. Field of the Invention
This invention relates to a potting composition used for the embedment and protection of light-emitting semiconductor members and a light-emitting semiconductor device comprising a light-emitting semiconductor member embedded in the potting composition.
2. Background Art
FIG. 1 is a schematic cross section of an exemplary surface mounting light-emitting semiconductor device in which a light-emitting member is die-bonded to an insulating housing.
FIG. 2 is a schematic cross section of another exemplary surface mounting light-emitting semiconductor device in which a light-emitting member is die-bonded to lead electrodes inserted through a housing.
FIG. 3 is a schematic cross section of an LED as a lamp type light-emitting semiconductor device.
In the potting composition (silicone rubber composition) intended for the embedment and protection of light-emitting semiconductor members, component (A) is a main component or base polymer of the potting composition. It cures through crosslinking with component (B) under the catalysis of component (C). It is an organopolysiloxane having a vinyl group at an end, especially each end of its molecular chain, represented by the average compositional formula (1):
RaSiO(4−a)/2 (1)
wherein R is a monovalent organic group, at least 5 mol % of R being phenyl, and “a” is a number of 1.5 to 3.0.