Homoepitaxial gallium nitride based photodetector and method of producing
AssigneeGeneral Electic Company
InventorsMark Philip D'Evelyn, Nicole Andrea Evers, Kanin Chu
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Abstract
A photodetector comprising a gallium nitride substrate, at least one active layer disposed on the substrate, and a conductive contact structure affixed to the active layer and, in some embodiments, the substrate. The invention includes photodetectors having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers may comprise Ga1−x−yAlxInyN1−z−wPzAsw, or, preferably, Ga1−xAlxN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 105 cm−2. A method of making the photodetector is also disclosed.
Claims99
A photodetector, said photodetector, comprising:
- a) a substrate, said substrate comprising a homoepitaxially grown single crystal gallium nitride wafer having a dislocation density of less than about 103 cm−2;
- b) at least one active layer disposed on said substrate;
- and
- c) at least one conductive contact structure affixed to at least one of said substrate and said at least one active layer.
A photodetector, said photodetector comprising:
- a) a gallium nitride substrate, said gallium nitride substrate comprising a homoepitaxially grown single crystal gallium nitride wafer having a dislocation density of less than about 105 cm−2;
- b) at least one active layer disposed on said gallium nitride substrate, said at least one active layer comprising Ga1−x−yAlxInyN1−z−wPzAsw, wherein 0≦x, y, z, w≦1 and at least one of x and y have a non-zero value, wherein 0<x+y≦1, and 0≦z+w≦1;
- and
- c) at least one conductive contact structure affixed to at least one of said gallium nitride substrate and said at least one active layer.
A photodetector, said photodetector, comprising:
- a) a substrate, said substrate comprising a homoepitaxially grown single crystal gallium nitride wafer having a dislocation density of less than about 103 cm−2 cut from a portion of a boule grown by precipitating gallium nitride onto at least one of a gallium nitride crystal, a gallium nitride boule, and a gallium nitride crystal seed using a supercritical solvent at a temperature greater than about 550° C. and a pressure greater than about 5 kbar;
- b) at least one active layer disposed on said substrate;
- and
- c) at least one conductive contact structure affixed to at least one of said substrate and said at least one active layer.
A photodetector, said photodetector comprising:
- a) a substrate, said substrate comprising a homoepitaxially grown single crystal gallium nitride wafer having a dislocation density of less than about 105 cm−2 cut from a portion of a boule grown by precipitating gallium nitride onto at least one of a gallium nitride crystal, a gallium nitride boule, and a gallium nitride crystal seed using a supercritical solvent at a temperature greater than about 550° C. and a pressure greater than about 5 kbar;
- b) at least one active layer disposed on said gallium nitride substrate, said at least one active layer comprising Ga1−x−yAlxInyN1−z−wPzAsw, wherein 0≦x, y, z, w≦1 and at least one of x and y have a non-zero value, wherein 0<x+y≦1, and 0≦z+w≦1;
- and
- c) at least one conductive contact structure affixed to at least one of said gallium nitride substrate sand said at least one active layer.
Dependencies are inferred from the claim text.