Semiconductor light emitting device and method for producing the same
AssigneeSharp Kabushiki Kaisha
InventorMasaya Ishida
Life of this patent
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Abstract
A semiconductor light emitting device comprises: a substrate; an n-type layer provided on the substrate and made of a nitride semiconductor material; a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1−x−y)AlyN (0≦x, 0≦y, x+y<1) and a plurality of barrier layers each made of InsGa(1−s−t)AltN (0≦s, 0≦t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer; and a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material. The p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016 atoms/cm3 and less than or equal to about 1×1019 atoms/cm3.
Claims13
A semiconductor light emitting device comprising.
- a substrate;
- an n-type layer provided on the substrate and made of a nitride semiconductor material;
- a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1−x−y)AlyN(0≦x, 0≦y, x+y<1) and a plurality of barrier layers each glade of InsGa(1−s−t)AltN(0≦s, 0≦t, s+t<1), the multiple quantum well structure active layer being provided on then-type layer, and
- a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material,
- wherein the p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016 atoms/cm3 and less than or equal to about 1×1019 atoms/cm3, and
- the p-type layer contains Mg and the Mg concentration of the p-type layer is greater than or equal to about 4×1019 atoms/cm3 and less than or equal to about 1×1021 atoms/cm3.
A semiconductor light emitting device comprising a substrate;
- an n-type layer provided on the substrate and made of a nitride semiconductor material;
- a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1−x−y)AlyN(0≦x, 0≦y, x+y<1) and a plurality of barrier layers each made of InsGa(1−s−t)AltN(0≦s, 0≦t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer;
- and
- a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material,
- wherein the p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016 atoms/cm3 and less than or equal to about 1×1019 atoms/cm3, and
- the n-type layer contains hydrogen, and the hydrogen concentration of the n-type layer is less than or equal to 1×1017 atoms/cm3.
A semiconductor light emitting device, comprising:
- a substrate;
- an n-type layer provided on the substrate and made of a nitride semiconductor material;
- a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1−x−y)AlyN(0≦x, 0≦y, x+y<1) and a plurality of barrier layers each made of InsGa(1−s−t)AltN(0≦s, 0≦t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer, and
- a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material,
- wherein the p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016 atoms/cm3 and less than or equal to about 1×1019 atoms/cm3,
- further comprising a p-type electrode for applying a voltage via the p-type layer to the multiple quantum well structure active layer, wherein the p-type electrode contains a combination of Au and Pd, and
- wherein the p-type layer contains Mg, and the Mg concentration of the p-type layer is greater than or equal to about 4×1019 atoms/cm3 and less than or equal to about 1×1021 atoms/cm3.
A semiconductor light emitting device, comprising:
- a substrate;
- an n-type layer provided on the substrate and made of a nitride semiconductor material;
- a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1−x−y)AlyN(0≦x, 0≦y, x+y<1) and a plurality of barrier layers each made of InsGa(1−s−t)AltN(0≦s, 0≦t, s+t<1), the multiple quantum well structure active layer being provided on the n-type layer, and
- a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material,
- wherein the p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×1016 atoms/cm3 and less than or equal to about 1×1019 atoms/cm3,
- further comprising a p-type electrode for applying a voltage via the p-type layer to the multiple quantum well structure active layer, wherein the p-type electrode contains a combination of Au and Pd, and
- wherein the n-type layer contains hydrogen and the hydrogen concentration of the n-type layer is less than or equal to 1×1017 atoms/cm3.
Dependencies are inferred from the claim text.