Light-emitting diode and laser diode having n-type ZnO layer and p-type semiconductor laser

A method for producing a light-emitting diode which includes an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer including SrCu2O2, said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the transparent yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface while keeping the substrate at a temperature in the range of 200 to 1200° C., and forming on the ZnO layer the p-type semiconductor layer including SrCu2O2 while keeping the substrate at a temperature in the range of 200 to 800° C.

A method for producing a light-emitting diode which includes an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer including one of CuAlO2 and CuGaO2, said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the transparent yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface while keeping a substrate at a temperature in the range of 200 to 1200° C., and forming on the ZnO layer the p-type semiconductor layer including CuAlO2 or CuGaO2 while keeping the substrate at a temperature in the range of 500 to 800° C.

A method for producing a light-emitting diode which including an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, said p-type layer being formed on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the transparent yttria-stabilized zirconia (YSZ) (111) single crystal substrate having an atomically flat surface without heating the substrate, irradiating the surface of the ZnO layer with ultraviolet light to promote crystallization therein, and forming on the ZnO layer the p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2 without heating the substrate, and irradiating the surface of the p-type semiconductor layer with ultraviolet light to promote crystallization therein.