3-5 Group compound semiconductor and light emitting device
AssigneeSumitomo Chemical Company, Limited
InventorsYasushi Iyechika, Yoshihiko Tsuchida, Yasuyuki Kurita
Life of this patent
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Abstract
Provide is a 3-5 group compound semiconductor having a concentration of a p-type dopant of 1×1017 cm− or more and 1×1021 cm−3 or less, which can be laminated to control the carrier concentration of an InGaAlN-type mixed crystal in a low range with high reproducibility. Also provided is a 3-5 group compound semiconductor in which the carrier concentration of an InGaAlN-type mixed crystal is controlled in a low range with high reproducibility, and a light emitting device having high light emitting efficiency.
Claims8
A III-V group compound semiconductor represented by the general formula InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) in which the concentration of an n-type carrier is 1×1019 cm−3 or less and the concentration of a p-type dopant is 1×1017 cm−3 or more and 1×1021 cm−3 or less;
- wherein the n-type carrier and the p-type dopant are contained in a single layer.
A III-V group compound semiconductor having a structure in which a layer (B) composed of a III-V group compound semiconductor represented by the general formula InuGavAlwN (u+v+w=1, 0<u≦1, 0≦v<1, 0≦w<1) is adjacent to a first layer (A) composed of a III-V group compound semiconductor represented by the general formula InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) in which the concentration of an n-type carrier is 1×1019 cm−3 or less and the concentration of a p-type dopant is 1×1017 cm−3 or more and 1×1021 cm−3 or less, and the band gap is larger than that of said second layer (B);
- wherein the n-type carrier and the p-type dopant are contained in a single layer.
A III-V group compound semiconductor having a structure in which a layer (A) composed of a III-V group compound semiconductor represented by the general formula InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) in which the concentration of an n-type carrier is 1×1019 cm−3 or less and the concentration of a p-type dopant is 1×1017 cm−3 or more and 1×1021 cm−3 or less is adjacent to a layer (C) composed of a p-type III-V group compound semiconductor represented by the general formula InaGabAlcN (a+b+c=1, 0≦a≦1, 0≦b≦1, 0≦c≦1);
- wherein the n-type carrier and the p-type dopant are contained in a single layer.
A III-V group compound semiconductor having a structure comprising at least one layer (A) composed of a III-V group compound semiconductor represented by the general formula InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) in which the concentration of an n-type carrier is 1×1019 cm−3 or less and the concentration of a p-type dopant is 1×1017 cm−3 or more and 1×1021 cm−3 or less, between a layer (B) composed of a III-V group compound semiconductor represented by the general formula InuGavAlwN (u+v+w=1, 0<x≦1, 0≦y<1, 0≦z<1) and a layer (C) composed of a p-type III-V group compound semiconductor represented by the general formula InaGabAlcN (a+b+c=1, 0≦a≦1, 0≦b≦1, 0≦c≦1),
- wherein the n-type carrier and the p-type dopant are contained in a single layer, and wherein layer (A) is adjacent to layer (C).
A III-V group compound semiconductor having a structure comprising a layer (B) composed of a III-V group compound semiconductor represented by the general formula InuGavAlwN (u+v+w=1, 0<u≦1, 0≦v<1, 0≦w<1) carrying thereon a laminated layer (D) composed of an n-type III-V group compound semiconductor represented by the general formula InpGaqAlrN (p+q+r=1, 0≦p≦1, 0≦q≦1, 0≦r≦1) having larger band gap than that of said layer (B), and at least one layer (A) composed of a III-V group compound semiconductor represented by the general formula InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) in which the concentration of an n-type carrier is 1×1019 cm−3 or less and the concentration of a p-type dopant is 1×1017 cm−3 or more and 1×1021 cm−3 or less, between said layer (D) composed of the n-type III-V group compound semiconductor and a layer (C) composed of a p-type III-V group compound semiconductor represented by the general formula InaGabAlcN (a+b+c=1, 0≦a≦1, 0≦b≦1, 0≦c≦1), on the opposite side to said layer (B);
- wherein the n-type carrier and the p-type dopant are contained in a single layer.
Dependencies are inferred from the claim text.