Back to results
US 6,806,501 B2Granted
Integrated circuit having SiC layer
AssigneeInteruniverstair Microelektronica Centrum
InventorsSerge Vanhaelemeersch, Herman Meynen, Philip D. Dembowski
Life of this patent
Estimating the term…
Abstract
The present invention is related to an integrated circuit having an SiC etch stop layer fabricated using a method for removal of silicon carbide layers and in particular amorphous SiC of a substrate comprising the steps of: converting at least partly said exposed part of said carbide-silicon layer into an oxide-silicon layer by exposing said carbide-silicon layer to an oxygen containing plasma; and removing said oxide-silicon layer from said substrate.
Claims19
An integrated circuit on a substrate having a surface with at least one conductive layer comprising:
- a conductive layer deposited on a semiconducting layer,
- at least one dielectric layer having at least one opening extending through said dielectric layer to expose at least a part of said conductive layer, and
- a carbide-silicon layer being formed at least on said conductive layer and being positioned between said dielectric layer and said conductive layer adjacent to said exposed part of said conductive layer.
Dependencies are inferred from the claim text.