Semiconductor device and a method of manufacturing the same

A semiconductor device comprising:

• a first substrate on which a pixel region of reverse stagger type thin film transistors, arranged in a matrix shape and having an amorphous semiconductor corresponding to an intersection portion of a plurality of scanning lines and a plurality of source lines,
• which are formed to intersect through an insulating film, is formed;
• a second substrate on which an opposing electrode corresponding to said pixel region is formed;
• a third substrate made from glass or quartz, formed externally to said pixel region of said first substrate, and having a driver circuit formed from a plurality of thin film transistors having a crystalline semiconductor;
• and
• a liquid crystal layer sandwiched between said first substrate and said second substrate, characterized in that:
• at least one end surface of a semiconductor layer of said reverse stagger type thin film transistor made from said amorphous semiconductor, and of a first conductive layer formed on said semiconductor layer, are formed in rough correspondence;
• a plurality of said third substrates are formed;
• and
• said plurality of thin film transistors contain a first thin film transistor formed from a first gate insulating film and a second thin film transistor formed from a second gate insulating film.

A semiconductor device comprising:

• a first substrate on which a pixel region of:
• reverse stagger type thin film transistors, arranged in a matrix shape and having an amorphous semiconductor formed corresponding to an intersection portion of a plurality of scanning lines and a plurality of source lines, which are formed to intersect through an insulating film;
• and
• pixel electrodes connected to said reverse stagger type thin film transistors;
• is formed;
• a second substrate on which an opposing electrode corresponding to said pixel region is formed;
• a third substrate made from glass or quartz, formed externally to said pixel region of said first substrate, and having a driver circuit formed from a plurality of thin film transistors having a crystalline semiconductor;
• and
• a liquid crystal layer sandwiched between said first substrate and said second substrate, characterized in that:
• at least one end surface of a semiconductor layer of said reverse stagger type thin film transistor made from said amorphous semiconductor, and of a first conductive layer formed on said semiconductor layer, are formed in rough correspondence;
• a plurality of said third substrates are formed;
• and
• said plurality of thin film transistors contain a first thin film transistor formed from a first gate insulating film and a second thin film transistor formed from a second gate insulating film.

A method of manufacturing a semiconductor device, comprising:

• forming a gate wiring over a first substrate by using a first mask;
• forming an insulating film, a first semiconductor film, a second semiconductor film, and a first conductive film, in order;
• etching said first semiconductor film, said second semiconductor film, and said first conductive film into a predetermined shape by using a second mask;
• forming a second conductive film, after said etching;
• forming a pixel electrode from said second conductive film by etching said second conductive film using a third mask;
• etching said first conductive film, said second semiconductor film, and a portion of said first semiconductor film, using said third mask;
• forming a plurality of driver circuits on a third substrate, formed from thin film transistors having a crystalline semiconductor wherein at least one of said thin film transistors has a first thickness gate insulating film and at least another one of said thin film transistors has a second thickness gate insulating film;
• forming a stick shape substrate by partitioning the plurality of driver circuits formed over said third substrate;
• and
• electrically connecting said driver circuits and said pixel region by joining together said stick shape substrate with the periphery of said pixel region of said first substrate in a plurality of locations.

A method of manufacturing a semiconductor device, comprising:

• forming a gate wiring and a convex portion over a first substrate by using a first mask;
• forming an insulating film, a first semiconductor film, a second semiconductor film, and a first conductive film, in order;
• etching said first semiconductor film, said second semiconductor film, and said first conductive film into a predetermined shape by using a second mask;
• forming a second conductive film, after said etching;
• forming a pixel electrode from said second conductive film by etching said second conductive film using a third mask;
• etching said first conductive film, said second semiconductor film, and a portion of said first semiconductor film, using said third mask;
• forming a plurality of driver circuits over a third substrate, formed from thin film transistors having a crystalline semiconductor wherein at least one of said thin film transistors has a first thickness gate insulating film and at least another one of said thin film transistors has a second thickness gate insulating film;
• forming a stick shape substrate by partitioning the plurality of driver circuits formed over said third substrate;
• and
• electrically connecting said driver circuits and said pixel region by joining together said stick shape substrate with the periphery of said pixel region of said first substrate in a plurality of locations.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a gate wiring on a first substrate by using a first mask;
• forming an insulating film, a first semiconductor film, a second semiconductor film, and a first conductive film, in order;
• etching said first semiconductor film, said second semiconductor film, and said first conductive film into a predetermined shape by using a second mask;
• forming a second conductive film, after said step of etching said first semiconductor film, said second semiconductor film and said first conductive film;
• forming a pixel electrode from said second conductive film by etching said second conductive film using a third mask;
• etching said first conductive film, said second semiconductor film, and a portion of said first semiconductor film, using said third mask;
• forming a plurality of driver circuits on a third substrate, said plurality of driver circuits being formed from thin film transistors having a crystalline semiconductor;
• forming a stick shaped substrate by partitioning the plurality of driver circuits formed on said third substrate;
• electrically connecting said driver circuits and said pixel region by joining together said stick shaped substrate with the periphery of said pixel region of said first substrate in a plurality of locations;
• and
• forming a first thickness gate insulating film and forming a second thickness gate insulating film.