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US 6,806,495 B1Granted
Semiconductor device and method of fabricating the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama, Setsuo Nakajima
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Abstract
A liquid crystal display device; in the prior art has been high in its manufactural cost for the reason that TFTs have been fabricated using, at least, five photo-masks.
Claims22
A semiconductor device comprising:
- a gate wiring which is formed on an insulating surface;
- a an insulating film which is formed on said gate wiring;
- an amorphous semiconductor film which is formed on said insulating film;
- a pair of impurity regions which are formed on said amorphous semiconductor film;
- an electrode which is formed on the impurity region;
- and
- a pixel electrode which is formed on said electrode,
- wherein one end face of said impurity region lies substantially in register with an end face of said amorphous semiconductor film and one end of said electrode,
- wherein the other end face of said impurity region lies substantially in register with the other end face of said electrode and an end face of said pixel electrode.
6 more elements
A semiconductor device comprising:
- a gate wiring which is formed on an insulating surface;
- an insulating film which is formed on said gate wiring;
- an amorphous semiconductor film which is formed on said insulating film;
- a pair of impurity regions which are formed on said amorphous semiconductor film;
- an electrode which is formed on the impurity region;
- and
- a pixel electrode which is formed on said electrode,
- wherein one end face of said impurity region lies substantially in register with an end face of said amorphous semiconductor film and an end face of said electrode, and the other end face thereof lies substantially in register with an end face of said pixel electrode and the other end face of said electrode,
- wherein said one end face of said impurity region, said end face of said amorphous semiconductor film and said end face of said electrode are contact with said pixel electrode.
6 more elements
A semiconductor device comprising:
- a gate wiring which is formed on an insulating surface;
- an insulating film which is formed on said gate wiring;
- an amorphous semiconductor film which is formed on said insulating film;
- a source region and a drain region which are formed on said amorphous semiconductor film;
- a source electrode which is formed on said source region;
- a drain electrode which is formed on said drain region;
- a transparent conductive film which is formed on said source electrode;
- and
- a pixel electrode which is formed on said drain electrode,
- wherein one end face of said drain region lies substantially in register with an end face of said amorphous semiconductor film and one end face of said drain electrode,
- wherein the other end face of said drain region lies substantially in register with the other end face of said drain electrode and an end face of said pixel electrode.
8 more elements
A semiconductor device comprising:
- a gate electrode formed on an insulating surface,
- a gate insulating film formed on said gate electrode,
- an amorphous semiconductor film formed on said gate insulating film;
- a source region and a drain region formed on said amorphous semiconductor film;
- a source electrode formed on said source region;
- a drain electrode formed on said drain region;
- a transparent conductive layer formed on said source electrode;
- and
- a pixel electrode formed on said drain electrode,
- wherein one end face of said source region lies substantially in register with one end face of said amorphous semiconductor film and one end face of said source electrode,
- wherein one end face of said drain region lies substantially in register with the other end face of said amorphous semiconductor film and one end face of said drain electrode,
- wherein the other face of said source region lies substantially in register with the end face of said source electrode and an end face of said transparent conductive layer, and
- wherein the other end surface of said drain region lies substantially in register with the other end face of said drain electrode and an end face of said pixel electrode.
10 more elements
A semiconductor device comprising:
- a gate electrode formed on an insulating surface,
- a gate insulating film formed on said gate electrode,
- an amorphous semiconductor film formed on said gate insulating film;
- a source region and a drain region formed on said amorphous semiconductor film;
- a source electrode formed on said source region;
- a drain electrode formed on said drain region;
- a transparent conductive layer formed on said source electrode;
- and
- a pixel electrode formed on said drain electrode,
- wherein one end face of said source region lies substantially in register with one end face of said amorphous semiconductor film and one end face of said source electrode,
- wherein one end face of said drain region lies substantially in register with the other end face of said amorphous semiconductor film and one end face of said drain electrode,
- wherein the other face of said source region lies substantially in register with the end surface of said source electrode and an end face of said transparent conductive layer,
- wherein the other end face of said drain region lies substantially in register with the other end face of said drain electrode and an end face of said pixel electrode,
- wherein said one face of said drain region, said one amorphous semiconductor film and said one face of said source electrode are contact with said transparent conductive layer, and
- wherein said one face of said drain region, the other amorphous semiconductor film and said one face of said drain electrode is contact with said pixel electrode.
12 more elements
Dependencies are inferred from the claim text.