Inductively coupled plasma generating apparatus incorporating double-layered coil antenna
AssigneeSamsung Electronics Co., Ltd.
InventorJae-joon Oh
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorJae-joon Oh
Estimating the term…
An inductively coupled plasma (ICP) generating apparatus is provided. The apparatus includes an evacuated reaction chamber; an antenna system installed at an upper portion of the reaction chamber to induce an electric field for ionizing reaction gas supplied into the reaction chamber and generating plasma; and an RF power source connected to the antenna system to supply RF power to the antenna system. The antenna system includes a lower antenna installed adjacent to the upper portion of the reaction chamber, and an upper antenna installed a predetermined distance above the lower antenna. Further, the lower and the upper antennas respectively include an outside antenna placed to correspond to edge portions of a substrate within the reaction chamber, and an inside antenna placed inside the outside antenna with a predetermined space therebetween. In the ICP generating apparatus, uniformity of plasma density around a substrate within the reaction chamber can be controlled by adjusting the positions of the upper or the inside antenna.
An inductively coupled plasma (ICP) generating apparatus, comprising:
An inductively coupled plasma (ICP) generating apparatus, comprising:
Dependencies are inferred from the claim text.