Device and method for processing substrate

A substrate processing method using a substrate processing apparatus equipped with a processing container, a substrate holding stand prepared for holding a substrate-to-be-processed in the processing container, a first processing gas supply unit provided on a first side of the substrate holding stand in the processing container, a first exhaust opening provided on a second side countering the first side of the substrate holding stand in the processing container, a second processing gas supply unit provided on the second side of the substrate holding stand in the processing container, and a second exhaust opening provided on the first side of the substrate holding stand in the processing container, comprising:

• a first step for performing a first process on the surface of the substrate-to-be-processed, wherein the first processing gas supply unit supplies a first processing gas from the first side to the second side along the surface of the substrate-to-be-processed, and the discharging volume of the second exhaust opening is controlled to be less than the discharging volume of the first exhaust opening, and
• a second step for performing a second process on the surface of the substrate-to-be-processed, wherein the second processing gas supply unit supplies a second processing gas that is different from the first processing gas from the second side to the first side along the surface of the substrate-to-be-processed, and the discharging volume of the first exhaust opening is controlled to be less than the discharging volume of the second exhaust opening.

A substrate processing apparatus comprising:

• a processing container,
• a substrate holding stand prepared for holding a substrate-to-be-processed in the processing container,
• a processing gas supply unit provided on a first side of the substrate holding stand in the processing container for supplying a processing gas to the surface of the substrate-to-be-processed on the substrate holding stand, wherein the processing gas flows along the surface of the substrate-to-be-processed from the first side to a second side that counters the first side,
• a first exhaust opening provided on the second side of the substrate holding stand in the processing container,
• a radical source provided on the second side of the substrate holding stand in the processing container for supplying radicals to the surface of the substrate-to-be-processed on the substrate holding stand such that the radicals flow along the surface of the substrate-to-be-processed from the second side to the first side, and
• a second exhaust opening provided on the first side of the substrate holding stand in the processing container.