Tantalum oxide film, use thereof, process for forming the same and composition
AssigneeJsr Corporation
InventorsHiroshi Shiho, Hitoshi Kato, Sachiko Hashimoto, Isamu Yonekura, Yasuo Matsuki
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Abstract
A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.
Claims29
A composition for forming a tantalum oxide film, consisting essentially of at least one tantalum-containing product selected from the group consisting of (A1) a reaction product of (a1) a tantalum alkoxide and (a2) at least one compound selected from the group consisting of an amino alcohol having no more than one hydroxyl group, a compound having two or more hydroxyl groups in the molecule, a β-diketone, a β-ketoester, an ester of β-dicarboxylic acid, lactic acid, ethyl lactate and 1,5-cyclooctadiene, and (A2) a hydrolyzate of the reaction product.
A composition comprising at least one tantalum-containing compound selected from the group consisting of (A1) a reaction product of (a1) a tantalum alkoxide and (a2) at least one compound selected from the group consisting of an amino alcohol having no more than one hydroxyl group, a compound having two or more hydroxyl groups in the molecule, a β-diketone, a β-ketoester, an ester of β-dicarboxylic acid, lactic acid, ethyl lactate and 1,5-cyclooctadiene, (A2) a hydrolyzate of the reaction product of (a1) and (a2);
- and (B) an ester of an orthocarboxylic acid.
Dependencies are inferred from the claim text.