Semiconductor device structured to prevent oxide damage during HDP CVD
AssigneeOki Electric Industry Co., Ltd.
InventorMinoru Saito
Life of this patent
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Abstract
A semiconductor device includes a patterned conductive layer on which an initial dielectric film is deposited by a non-etching deposition process. A second dielectric film is then deposited on the initial dielectric film by high-density plasma chemical vapor deposition (HDP CVD). The HDP CVD process etches the second dielectric film as it is being deposited, thereby smoothing the surface of the second dielectric film. The initial dielectric film insulates the patterned conductive layer from the plasma used in the HDP CVD process, so that plasma charge is not conducted to underlying oxide films, such as gate oxide films, and does not cause oxide damage.
Claims40
A method of fabricating a semiconductor device, comprising:
- forming an insulating film on a surface of a substrate;
- forming a patterned conductor layer on the insulating film;
- depositing a first dielectric film covering exposed surfaces of the patterned conductive layer and the insulating film by a non-etching deposition process;
- and
- depositing a second dielectric film on the first dielectric film by high-density plasma chemical vapor deposition (CVD), the first dielectric film preventing plasma charge from being conducted through the patterned conductive layer to the insulating film.
A semiconductor device comprising:
- a substrate;
- an insulating film disposed on a surface of the substrate:
- a patterned conductive layer disposed on the insulating film;
- a first dielectric film disposed on exposed surfaces of the patterned conductive layer and the insulating film, the first dielectric film being deposited by a non-etching deposition process;
- and
- a high-density plasma CVD dielectric film disposed on the first dielectric film.
A method of fabricating a semiconductor device, comprising:
- forming an insulating film on a surface on a substrate;
- forming a first patterned conductive layer on the insulating film;
- depositing a first dielectric film covering the insulating film and the first patterned conductive layer;
- forming contact holes in the first dielectric film;
- forming a second patterned conductive layer on the first dielectric film, the second patterned conductive layer being electrically interconnected with the first patterned conductive layer through the contact holes;
- depositing a second dielectric film covering exposed surfaces of the second patterned conductive layer and the first dielectric film by a non-etching deposition process;
- and
- depositing a third dielectric film on the first dielectric film by high-density plasma chemical vapor deposition (CVD), the second dielectric film preventing plasma charge from being conducted through the first and second patterned conductive layers to the insulating film.
A semiconductor device comprising:
- a substrate;
- an insulating film disposed on the substrate;
- a first patterned conductive layer disposed on the insulating film;
- a first dielectric film disposed on exposed surfaces of the first patterned conductive layer and the insulating film, the first dielectric film having contact holes;
- a second patterned conductive layer disposed on the first dielectric film, the second patterned conductive layer being electrically interconnected with the first patterned conductive layer through the contact holes;
- a second dielectric film disposed on exposed surfaces of the second patterned conductive layer and the first dielectric film, the second dielectric film being deposited by a non-etching deposition process;
- and
- a high-density plasma CVD dielectric film disposed on the second dielectric film.
Dependencies are inferred from the claim text.