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AssigneeApplied Materials, Inc.
InventorsTzu-Fang Huang, Yung-Cheng Lu, Li-Qun Xia, Ellie Yieh, Wai-Fan Yau, David W. Cheung, Ralf B. Willecke, Kuowei Liu, Ju-Hyung Lee, Farhad K. Moghadam, Yeming Jim Ma
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A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.
A process for depositing a low dielectric constant film, comprising decomposing one or more organosilicon compounds selected from a group consisting of octamethylcyclotetrasiloxane, hexamethyldisiloxane, bis(1-methyldisiloxanyl)methane, 2,4,6,8,10-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 2,4,6-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran at a RF power density of at least about 0.03 W/cm2 and at a processing chamber pressure of between about 0.2 Torr and about 20 Torr to deposit a film comprising silicon, oxygen, and a carbon content of at least 1% by atomic weight.
A process for depositing a low dielectric constant film, consisting essentially of decomposing one or more organosilicon compounds selected from the group consisting of octamethylcyclotetrasiloxane, 2,4,6,8-tetramethylcyclotetrasiloxane, 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane,1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 2,4,6,8,10-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, 2,4,6-trisilanetetrahydropyran, and 2,5-disilanetetrahydrofuran at a power density of greater than about 0.03 W/cm2 and at a processing chamber pressure of between about 0.2 Torr and about 20 Torr, and a carrier gas flow rate less than or equal to a combined flow rate of the one or more organosilicon compounds at conditions sufficient to deposit a film comprising silicon, oxygen, and carbon and an atomic ratio of carbon to silicon (C:Si) of greater than or equal to about 1:9.
The process of craim 10, wherein the atomic ratio of carbon to silicon (C:Si) is less than about 1:1 in the film.
A process for depositing a low dielectric constant film, comprising decomposing octamethylcyclotetrasiloxane at a power density ranging between about 0.9 W/cm2 and about 3.2 W/cm2 and at a processing chamber pressure of between about 0.2 Torr and about 20 Torr to deposit a film having an atomic ratio of carbon to silicon (C:Si) of between about 1:9 and about 1:1.
Dependencies are inferred from the claim text.