Method of forming integrated circuitry, and method of forming a contact opening

A method of forming integrated circuitry comprising:

• forming a silicon nitride comprising layer over a semiconductor substrate;
• forming at least one enriched region within the silicon nitride comprising layer, the enriched region comprising Al;
• forming a silicon dioxide comprising layer proximate the silicon nitride comprising layer;
• and
• removing the silicon dioxide comprising layer substantially selectively relative to the silicon nitride comprising layer, the Al in the at least one enriched region enhancing selectivity to the silicon nitride comprising layer during the removing than would otherwise occur in the absence of the Al.

A method of forming integrated circuitry comprising:

• forming a silicon nitride comprising layer over a semiconductor substrate;
• implanting at least one of Al and Ga into the silicon nitride comprising layer;
• forming a silicon dioxide comprising layer proximate the silicon nitride comprising layer;
• removing the silicon dioxide comprising layer substantially selectively relative to the silicon nitride comprising layer, the implanted at least one of Al and Ga enhancing selectivity to the silicon nitride comprising layer during the removing than would otherwise occur in the absence of the implanted at least one of Al and Ga;
• and
• wherein the silicon nitride comprising layer has an outer surface, the implanted at least one of Al and Ga being spaced beneath the outer surface and not extending thereto.

A method of forming integrated circuitry comprising:

• forming a silicon nitride comprising layer over a semiconductor substrate;
• implanting Al into the silicon nitride comprising layer;
• forming a silicon dioxide comprising layer proximate the silicon nitride comprising layer;
• and
• removing the silicon dioxide comprising layer substantially selectively relative to the silicon nitride comprising layer, the implanted Al enhancing selectivity to the silicon nitride comprising layer during the removing than would otherwise occur in the absence of the Al.

A method of forming integrated circuitry comprising:

• forming a substantially undoped silicon dioxide comprising layer over a semiconductor substrate;
• forming at least one enriched region within the substantially undoped silicon dioxide comprising layer, the enriched region comprising B, Al, Ga or mixtures thereof;
• forming a doped silicon dioxide comprising layer proximate the substantially undoped silicon dioxide comprising layer;
• and
• removing the doped silicon dioxide comprising layer substantially selectively relative to the substantially undoped silicon dioxide comprising layer, the at least one enriched region enhancing selectivity to the substantially undoped silicon dioxide comprising layer during the removing than would otherwise occur in the absence of the B, Al, Ga or mixtures thereof.

A method of forming integrated circuitry comprising:

• forming a substantially undoped silicon dioxide comprising layer over a semiconductor substrate;
• implanting at least one of B, Al, and Ga into the substantially undoped silicon dioxide comprising layer;
• forming a doped silicon dioxide comprising layer proximate the substantially undoped silicon dioxide comprising layer;
• and
• removing the doped silicon dioxide comprising layer substantially selectively relative to the substantially undoped silicon dioxide comprising layer, the implanted at least one of B, Al and Ga enhancing selectivity to the substantially undoped silicon dioxide comprising layer during the removing than would otherwise occur in the absence of the B, Al, Ga or mixtures thereof.

A method of forming a contact opening within insulative material to a node location between a pair of conductive device components, comprising:

• forming a pair of spaced conductive device components over a semiconductor substrate, each device component having at least one sidewall which faces the other device component of the pair;
• forming an insulative material mass over each of said sidewalls, the masses being laterally spaced from one another in a non-contacting relationship, the masses comprising a first insulative material and having a respective lateral outer enriched region comprising B, Al, Ga or mixtures thereof;
• forming a second insulative material different from the first insulative material between the insulative material masses;
• and
• etching a contact opening into the second insulative material to a node location between the insulative material masses substantially selectively relative to the insulative material masses, the lateral outer enriched regions enhancing selectivity to the insulative masses during the etching than would otherwise occur in the absence of the B, Al, Ga or mixtures thereof.

A method of forming a contact opening within insulative material to a node location between a pair of conductive device components, comprising:

• forming a pair of spaced conductive device components over a semiconductor substrate, each device component having at least one sidewall which faces the other device component of the pair;
• forming a silicon nitride comprising layer over the device components and on substrate material between the device components, the silicon nitride comprising layer having a continuous enriched outer region comprising B, Al, Ga or mixtures thereof;
• anisotropically etching the silicon nitride comprising layer effective to form insulative spacers over the facing sidewalls of the components, the spacers comprising enriched lateral outer regions of the silicon nitride comprising layer which are elevationally spaced from the substrate material between the device components;
• forming an insulative material between the spacers;
• and
• etching a contact opening into the insulative material to a node location between the spacers substantially selectively relative to the spacers, the spacer outer enriched regions enhancing selectivity to the spacers during the etching than would otherwise occur in the absence of the B, Al, Ga or mixtures thereof.

A method of forming integrated circuitry comprising:

• forming a silicon nitride comprising layer over a semiconductor substrate, the silicon nitride comprising layer comprising Al;
• forming a silicon dioxide comprising layer proximate the silicon nitride comprising layer;
• and
• removing the silicon dioxide comprising layer substantially selectively relative to the silicon nitride comprising layer, the Al enhancing selectivity to the silicon nitride comprising layer during the removing than would otherwise occur in the absence of the Al.

A method of forming integrated circuitry comprising:

• forming a substantially undoped silicon dioxide comprising layer over a semiconductor substrate, the substantially undoped silicon dioxide comprising layer comprising B, Al, Ga or mixtures thereof;
• forming a doped silicon dioxide comprising layer proximate the substantially undoped silicon dioxide comprising layer;
• and
• removing the doped silicon dioxide comprising layer substantially selectively relative to the substantially undoped silicon dioxide comprising layer, the B, Al, Ga or mixtures thereof enhancing selectivity to the substantially undoped silicon dioxide comprising layer during the removing than would otherwise occur in the absence of the B, Al, Ga or mixtures thereof.

A method of forming a contact opening within insulative material to a node location between a pair of conductive device components, comprising:

• forming a pair of spaced conductive device components over a semiconductor substrate, each device component having at least one sidewall which faces the other device component of the pair;
• forming insulative material masses over each of said sidewalls, the masses being laterally spaced from one another in a non-contacting relationship, the masses comprising a first insulative material comprising B, Al, Ga or mixtures thereof;
• forming a second insulative material different from the first insulative material between the insulative material masses;
• and
• etching a contact opening to a node location between the insulative material masses substantially selectively relative to the insulative material masses, the B, Al, Ga or mixtures thereof enhancing selectivity to the insulative masses during the etching than would otherwise occur in the absence of the B Al, Ga or mixtures thereof.

A method of forming integrated circuitry comprising:

• forming a silicon nitride comprising layer over a semiconductor substrate;
• forming at least one enriched region within the silicon nitride comprising layer, the enriched region comprising Al, Ga or a mixture thereof;
• forming a silicon dioxide comprising layer proximate the silicon nitride comprising layer;
• and
• removing the silicon dioxide comprising layer substantially selectively relative to the silicon nitride comprising layer, the at least one enriched region enhancing selectivity to the silicon nitride comprising layer during the removing than would otherwise occur in the absence of Al, Ga or a mixture thereof, the removing being void of any annealing of the silicon nitride comprising layer prior to the removing.

A method of forming integrated circuitry comprising:

• forming a silicon nitride comprising layer over a semiconductor substrate;
• implanting at least one of Al and Ga into the silicon nitride comprising layer;
• forming a silicon dioxide comprising layer proximate the silicon nitride comprising layer;
• and
• removing the silicon dioxide comprising layer substantially selectively relative to the silicon nitride comprising layer, the implanted at least one of Al and Ga enhancing selectivity to the silicon nitride comprising layer during the removing than would otherwise occur in the absence of Al, Ga or a mixture thereof, the removing being void of any annealing of the silicon nitride comprising layer prior to the removing.