Manufacturing method of semiconductor IC device
AssigneesTexas Instruments Incorporated, Hitachi, Ltd.
InventorsHiroyuki Enomoto, Kazuo Yamazaki, Masayuki Yasuda
Life of this patent
Estimating the term…
Abstract
To provide a manufacturing method of the semiconductor IC device having fine-structure connecting holes or trenches with high dimensional precision. There is the following step of the operation: a hook-shaped hard mask made of polysilicon film 18 and polysilicon film 20a is formed on the surface of silica film 17 for forming connecting holes 21 accommodating plugs that perform an electrical connection with the lower portion of the lower electrode of the capacitor in the COB-type memory cells, with the hook-shaped hard mask being used as an etching mask in selective etching so as to form connecting holes 21 on silica film 17 and silica film 15 below it.
Claims10
A manufacturing method of a semiconductor IC device, comprising the following steps:
- forming an insulating film on a semiconductor substrate or SOI substrate;
- forming a first mask film on the insulating film;
- forming a resist film on the first mask film, the resist film being used as an etching mask to form an opening on the first mask film, followed by the formation of trenches on the insulating film exposed from the opening;
- forming, after the resist film is removed, a second mask film on the semiconductor substrate or SOI substrate, said second mask film covering side walls and a bottom of the trenches;
- removing the second mask film from the bottom of the trenches without removing the second mask film on the side walls of the trenches, forming a side wall made of the second mask film on the side walls of the trenches;
- and using the first mask film and the second mask film as the etching mask in etching said trenches deeper than a thickness of said insulating film so as to penetrate into a portion of said substrate to form connecting holes.
A manufacturing method of a semiconductor IC device comprising the following steps:
- forming an insulating film on a semiconductor substrate or SOI substrate;
- forming a first mask film on the insulating film;
- forming a resist film on the first mask film, the resist film being used as an etching mask to form an opening on the first mask film, followed by the formation of trenches on the insulating film exposed from the opening;
- forming, after the resist film is removed, a second mask film on the semiconductor substrate or SOI substrate, said second mask film covering side walls and a bottom of the trenches;
- removing the second mask film from the bottom of the trenches without removing the second mask film on the side walls of the trenches, forming a side wall made of the second mask film on the side walls of the trenches;
- using the first mask film and the second mask film as the etching mask in etching said trenches deeper than a thickness of said insulating film so as to penetrate into a portion of said substrate to form an opening on the insulating film, followed by the formation of separating trenches on the semiconductor substrate or SOI substrate exposed from the opening;
- burying an insulating film in the separating trenches to form a separating portion.
A manufacturing method of a semiconductor IC device comprising the following steps:
- forming an insulating film on a semiconductor substrate or SOI substrate;
- forming a first mask film on the insulating film;
- forming a resist film on the first mask film, the resist film being used as an etching mask to form an opening on the first mask film, followed by the formation of trenches on the insulating film exposed from the opening;
- forming, after the resist film is removed, a second mask film on the semiconductor substrate or SOI substrate, said second mask film covering side walls and a bottom of the trenches;
- removing the second mask film from the bottom of the trenches without removing the second mask film on the side walls of the trenches, forming a side wall made of the second mask film on the side walls of the trenches;
- and using the first mask film and the second mask film as the etching mask in etching said trenches deeper than a thickness of said insulating film so as to penetrate into a portion of said substrate to form wiring-forming trenches on the insulating film, followed by burying an electroconductive material in the wiring-forming trenches to form a wiring layer made of the electroconductive material.
Dependencies are inferred from the claim text.