Method of barrier-less integration with copper alloy
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJing-Cheng Lin, Cheng-Lin Huang, Ching-Hua Hsieh, Shau-Lin Shue, Mong-Song Liang
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Abstract
A new method is provided for the creation of a barrier-free copper interconnect. A dual damascene structure is created in a layer of dielectric, a thin metal barrier layer is deposited. The metal barrier layer is oxidized, two layers are then deposited with the first layer comprising doped copper and the second layer comprising pure copper. The dual damascene structure is filled with copper, a thermal anneal is applied, stabilizing the deposited copper filling the dual damascene structure and forming metal oxide of the doped minority element. Excess copper is then removed from the dielectric.
Claims32
A method for creation of a copper interconnect, comprising:
- providing a substrate, having one or more insulating layers formed thereover;
- creating an opening in said one or more insulating layers;
- lining sidewalls of the opening with a compound layer by applying methods of deposit and etch, said compound layer comprising:
- (i) a patterned layer of metal barrier material over the sidewalls, thereby including a layer of metal barrier material oxide created over the surface there-of, exposing a bottom surface of the opening;
- (ii) a patterned layer of doped copper over the layer of barrier material and the metal barrier material oxide layer;
- and
- (iii) a layer of pure copper over the layer of doped copper;
- filling the opening with copper;
- and
- applying an anneal to the substrate and the there-over created layers.
A method for the creation of a copper interconnect, comprising:
- providing a substrate, having one or more insulating layers formed thereover;
- creating an opening in said one or more insulating layers;
- depositing a layer of metal barrier material over the one or more insulating layers, including insides surfaces of the opening;
- oxidizing the deposited layer of metal barrier material;
- depositing a layer of doped copper over the oxidized layer of metal barrier material;
- depositing a layer of pure copper over the doped copper;
- removing layers of metal barrier material, the oxidized surface thereof, the doped copper and the pure copper from the bottom of the opening by applying a deposit and etch concept;
- depositing a layer of copper over the layer of pure copper, filling the opening;
- applying an anneal to the substrate and thereover created layers;
- and
- removing excess material from the one or more layers of insulating.
A method for the creation of a copper interconnect, comprising:
- providing a substrate, having one or more insulating layers formed thereover;
- creating an opening in said one or more insulating layers;
- depositing a layer of metal barrier material over the one or more insulating layers;
- oxidizing the deposited layer of metal barrier material;
- removing layers of metal barrier material and the oxidized surface thereof from a bottom of the opening by applying a deposit and etch concept;
- depositing a layer of doped copper over the oxidized layer of metal barrier material;
- depositing a layer of pure copper over the doped copper;
- depositing a layer of copper over the layer of pure copper, filling the opening;
- applying an anneal to the substrate and thereover created layers;
- and
- removing excess material from the one or more insulating layers.
Dependencies are inferred from the claim text.