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US 6,806,187 B2Granted
Electrical contact for high dielectric constant capacitors and method for fabricating the same
AssigneeMicron Technology, Inc.
InventorsThomas M. Graettinger, F. Daniel Gealy
Life of this patent
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Abstract
An electrical contact includes a non-conductive spacer surrounding conductive plug material along the full height of the contact. The spacer inhibits oxide and other diffusion through the contact. In the illustrated embodiment, the contact includes metals or metal oxides which are resistant to oxidation, and additional conductive barrier layers. The contact is particularly useful in integrated circuits which include high dielectric constant materials.
Claims6
A method of electrically connecting a capacitor having a high dielectric constant dielectric to a transistor active area, the method comprising:
- forming a first barrier against corrosion covering sidewalls of a contact hole, wherein the first barrier comprises insulating material;
- forming a second barrier against corrosion covering inner sidewalls of the first barrier, wherein the second barrier comprises a conductive material;
- and
- forming a conductive contact plug which electrically connects the capacitor including a high dielectric constant dielectric to the transistor active area of a lower circuit element, wherein the second barrier is around the conductive contact plug and the first barrier is around the second barrier, thereby forming an electrical contact including at least two protective barriers around the conductive contact plug to avoid corrosive aspects associated with the fabrication of the capacitor, and wherein the first barrier is inside the contact hole.
1 more element
Dependencies are inferred from the claim text.