Method for forming low dielectric constant damascene structure while employing a carbon doped silicon oxide capping layer

A damascene method for forming a patterned conductor layer comprising:

• providing a substrate;
• forming over the substrate a patterned dielectric layer formed of a comparatively low dielectric constant dielectric material;
• forming aligned upon the patterned dielectric layer a patterned capping layer formed of a carbon doped silicon oxide dielectric material formed employing a plasma enhanced chemical vapor deposition (PECVD) method in turn employing an organosilane carbon and silicon source material, a substrate temperature of from about 0 to about 150 degrees centigrade, the patterned dielectric layer and the patterned capping layer defining an aperture;
• and
• forming into the aperture a patterned conductor layer while employing a damascene method wherein the patterned capping layer provides for attenuated abrasive damage to the patterned dielectric layer when forming into the aperture the patterned conductor layer while employing the damascene method and a portion of the thickness of the patterned capping layer is removed when forming into the aperture into the aperture the patterned conductor layer while employing the damascene method.