Method for eliminating via resistance shift in organic ILD
AssigneesInternational Business Machines Corporation, Infineon Technologies AG, United Microelectronics Corp.
InventorsDarryl Restaino, Shahab Siddiqui, Erdem Kaltalioglu, Delores Bennett, Chih-Chih Liu, Hsueh-Chung Chen, Tong-Yu Chen, Gwo-Shii Yang, Chiung-Sheng Hsiung
Life of this patent
Estimating the term…
Abstract
Application of an adhesion promoter to a cap layer and oxidation of the adhesion promoter prior to deposition of an organic interlevel dielectric thereon reduces via resistance problems during thermal cycles of semiconductor wafers embodying multiple levels of metal and organic interlevel dielectrics.
Claims9
A method for preventing via resistance shift in an organic interlevel dielectric in a damascene or dual damascene process, comprising:
- coating a previously-formed cap layer with a layer of an adhesion promoter;
- oxidizing the first adhesion promoter layer to form a silicon-dioxide-like film layer on the cap layer;
- applying a second adhesion promoter layer to the silicon-dioxide-like film layer;
- and
- applying a coating of an organic interlevel dielectric to the second adhesion promoter layer.
Dependencies are inferred from the claim text.