Unitary interconnection structures integral with a dielectric layer

An interconnection structure of a semiconductor device comprising:

• a first active region in a substrate;
• a second active region in the substrate;
• a first field region in the substrate disposed between the first active region and the second active region;
• an interlayer dielectric on the substrate;
• a first unitary interconnection structure contacting and electrically connecting the first active region and the second active region, the first unitary interconnection structure being disposed in the interlayer dielectric;
• a third active region in the substrate;
• second and third field areas in the substrate and on opposite sides of the third active region;
• a first conductive line on the second field area;
• a second conductive line on the third field area;
• a second unitary interconnection structure contacting the first conductive line and the second conductive line and electrically connecting the first conductive line to the second conductive line, the second unitary interconnection structure being disposed in the interlayer dielectric;
• and
• wherein a portion of the interlayer dielectric is disposed on the third active region and in a gap between the first conductive line and the second conductive line.

An interconnection structure of a semiconductor device, comprising

• a first active region disposed in a substrate, the first active region having a first surface that is substantially coplanar with a surface of the substrate;
• a transistor formed at the first active region and having an electrode having a first surface that is opposite and spaced apart from the surface of the substrate;
• an interlayer dielectric on the substrate;
• a first unitary interconnection structure contacting and electrically connecting the first surface of the first active region and the first surface of the electrode, the first unitary interconnection structure being disposed in the interlayer dielectric;
• a second active region in the substrate;
• first and second field areas in the substrate and on opposite sides of the second active region;
• a first conductive line on the first field area;
• a second conductive line on the second field area;
• a second unitary interconnection structure contacting the first conductive line and the second conductive line and electrically connecting the first conductive line to the second conductive line, the second unitary interconnection structure being disposed in the interlayer dielectric;
• and
• wherein a portion of the interlayer dielectric is disposed on the second active region and in a gap between the first conductive line and the second conductive line.