Connection substrate, a method of manufacturing the connection substrate, a semiconductor device, and a method of manufacturing the semiconductor device

A method of manufacturing a semiconductor device, comprising:

• a step of forming a connection substrate on a base, comprising, forming a metal wire on a base, applying an insulating material onto the metal wire to form an insulation layer, and forming another metal wire on the insulation layer, thereby connecting the metal wires which sandwich the insulation layer through a contact hole formed in the insulation layer;
• a step of mounting a semiconductor chip on the metal wire which is bared;
• and
• a step of separating the connection substrate from the base upon irradiating light or X-rays through the base.

A method of manufacturing a semiconductor device, comprising:

• a step of forming a connection substrate on a base, comprising, forming a metal wire to be connected to an electrode formed on a semiconductor chip, on a first base, applying an insulating material onto the metal wire to form an insulation layer, and forming another metal wire on the insulation layer, thereby connecting the metal wires which sandwich the insulation layer, through a contact hole formed in the insulation layer;
• a step of disposing a second base on the connection substrate;
• a step of separating the first base from the connection substrate upon irradiating light or X-rays through the base;
• a step of mounting a semiconductor chip on the metal wire that is bared;
• and
• a step of separating the connection substrate from the second base.

A method of manufacturing a connection substrate, comprising steps of:

• forming a metal wire on a first surface of a light transmissive base, and the first surface is coated by a solvent having a separation reaction due to light;
• applying an insulating material onto the metal wire to form an insulation layer;
• forming another metal wire on the insulation layer, thereby connecting the metal wires which sandwich the insulation layer, through a contact hole formed in the insulation layer;
• and
• separating the metal wires and the insulation layer from the light transmissive base upon radiating light through the light transmissive base.

A method of manufacturing a semiconductor device, comprising:

• a step of forming a connection substrate on a base, comprising, forming a metal wire on a first surface of a light transmissive base, and the first surface is coated by a solvent having a separation reaction due to light, applying an insulating material onto the metal wire to form an insulation layer and forming another metal wire on the insulation layer, thereby connecting the metal wires which sandwich the insulation layer through a contact hole formed in the insulation layer;
• a step of mounting a semiconductor chip on the metal wire which is bared;
• and
• a step of separating the connection substrate from the light transmissive base upon radiating light through the base.

A method of manufacturing a semiconductor device, comprising:

• a step of forming a connection substrate on a base, comprising, forming a metal wire to be connected to an electrode formed on a semiconductor chip, on a first surface of a first light transmissive base and the first surface is coated by a solvent having a separation reaction due to light, applying an insulating material on the metal wire to form an insulation layer, and forming another metal wire on the insulation layers, thereby connecting the metal wires which sandwich the insulation layer, through a contact hole formed in the insulation layer;
• a step of disposing a second base on the connection substrate;
• a step of separating the first light transmissive base from the connection substrate upon radiating light through the base;
• a step of mounting a semiconductor chip on a metal wire that is bared;
• and
• a step of separating the connection substrate from the second base.