Back to results
US 6,806,176 B2Granted
Semiconductor device and method of manufacturing the same, circuit board and electronic instrument
AssigneeSeiko Epson Corporation
InventorsNobuaki Hashimoto, Terunao Hanaoka
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes forming a bump projecting from a first surface of a semiconductor chip, and forming a conductive layer so that part of the conductive layer is exposed at a position depressed from a second surface of the semiconductor chip opposite to the first surface, wherein the exposed part of the conductive layer and the bump become electrical connecting sections.
Claims1
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a conductive layer on a surface of a semiconductor element on which is provided an electrode and electrically connecting the conductive layer to the electrode;
- forming a first electrical connecting section on the conductive layer and not above the electrode;
- and
- forming a hole in the semiconductor element so that part of a surface of the conductive layer on the side of the semiconductor element is exposed as a second electrical connecting section.
1 more element
Dependencies are inferred from the claim text.