Semiconductor devices and methods for fabricating the same
AssigneeAnam Semiconductor Inc.
InventorIk Soo Do
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Abstract
Semiconductor devices and methods for fabrication the same are disclosed. An illustrated method of fabricating a semiconductor device comprises: forming a trench on a substrate; forming a gate electrode by depositing and planarizing an oxide layer and polysilicon on the substrate including the trench; forming a gate oxide layer and a polysilicon layer on the substrate; forming source/drain regions by a photo process; and forming a contact plug on at least one of the source/drain regions. By controlling the overlap between the gate and the source/drain regions using a source/drain mask, current control becomes easy and a device sensitive to current control is easily fabricated. Sufficient spaces between the gate and the contact(s) due to the buried type gate make the fabrication processes easy.
Claims13
A method of fabricating a semiconductor device comprising:
- forming a trench in a substrate;
- forming a gate electrode by depositing and planarizing an oxide layer and polysilicon on the substrate including the trench;
- forming a gate oxide layer and a polysilicon layer on the substrate and the gate electrode;
- forming a source region and a drain region by a photo process;
- and
- forming a contact plug on at least one of the source region and the drain region.
A method as defined in 1, wherein the gate oxide layer comprises a USG layer formed at a high temperature.
A semiconductor device comprising:
- a trench in a substrate;
- a gate electrode buried inside the trench;
- a gate oxide layer on the gate electrode;
- a polysilicon layer on the gate oxide layer;
- source and drain regions in the polysilicon layer;
- an interlayer dielectric on the polysilicon layer;
- and
- a contact plug in the interlayer dielectric and contacting one of the source and the drain.
Dependencies are inferred from the claim text.