Semiconductor device manufacturing method
AssigneeSony Corporation
InventorsDharam Pal Gosain, Setsuo Usui
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Abstract
In a manufacturing method of a thin-film transistor having a polycrystalline Si film as its active region, an amorphous-phase Si film is first formed, and pulse laser beams are irradiated to crystallize the Si film and thereby form a polycrystalline Si film. After electrodes are made on a source region and a drain region, a SiNx film as a hydrogen-containing film is formed on the entire surface. By irradiating pulse laser beams to heat the SiNx film, hydrogen in the SiNx film is diffused into the polycrystalline Si film to hydrogenate it and reduce the trap density along crystal grain boundaries in the polycrystalline Si film.
Claims10
A semiconductor device manufacturing method comprising:
- forming a semiconductor film on a substrate;
- forming hydrogen-containing film on said semiconductor film by at least one of a plasma-enhanced chemical vapor deposition and physical vapor deposition;
- and
- irradiating a pulse energy beam to heat said hydrogen-containing film and thereby diffuse hydrogen in said hydrogen-containing film into said semiconductor layer;
- further comprising irradiating another pulse energy beam to crystallize or re-crystallize said semiconductor film after the step of forming said semiconductor film on said substrate and before the step of forming said hydrogen-containing film on said semiconductor film, an energy density of said pulse energy beam used for heating said hydrogen-containing film being set lower than an energy density of said another pulse energy beam being used to crystallize or re-crystallize said semiconductor film.
Dependencies are inferred from the claim text.