Ion implant method for topographic feature corner rounding
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJie-Shing Wu, Hsueh-Li Sun
Life of this patent
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Abstract
Within a method for forming a microelectronic fabrication, there is ion implanted into a corner of a topographic feature within a microelectronic substrate a dose of an implanting ion such as to effect rounding of the corner of the topographic feature when thermally oxidizing the microelectronic substrate. The dose of the implanting ion is implanted while employing a laterally etched mask layer as an ion implantation mask layer which exposes the corner. The dose of the implanting ion is selected from the group consisting of silicon containing ions, germanium containing ions, arsenic containing ions, phosphorus containing ions and boron containing ions, such to provide for rounding of the corner with enhanced process efficiency.
Claims18
A method for fabricating a microelectronic fabrication comprising:
- providing a microelectronic substrate having formed therein a topographic feature defined by a mask layer formed over the microelectronic substrate;
- laterally etching the mask layer to form a laterally etched mask layer which uncovers a corner of the topographic feature;
- ion implanting into the corner of the topographic feature, while employing the laterally etched mask layer as an ion implantation mask layer, a dose of an ion selected from the group consisting of arsenic containing ions, phosphorus containing ions and boron containing ions;
- and
- thermally oxidizing the microelectronic substrate to form adjoining the topographic feature a thermal oxide layer.
A method for fabricating a semiconductor microelectronic fabrication comprising:
- providing a semiconductor substrate having formed therein a topographic feature defined by a mask layer formed over the semiconductor substrate;
- laterally etching the mask layer to form a laterally etched mask layer which uncovers a corner of the topographic feature;
- ion implanting into the corner of the topographic feature, while employing the laterally etched mask layer as an ion implantation mask layer, a dose of an ion selected from the group consisting of arsenic containing ions, phosphorus containing ions and boron containing ions;
- and
- thermally oxidizing the semiconductor substrate to form adjoining the topographic feature a thermal oxide layer.
Dependencies are inferred from the claim text.