Method and system for scaling nonvolatile memory cells
AssigneeAdvanced Micro Devices, Inc.
InventorsKelwin Ko, Chi Chang
Life of this patent
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Abstract
A method and system for providing a semiconductor device are described. The method and system include providing a plurality of gate stacks and a first source drain halo implant. The first source and drain halo implant uses the plurality of gate stacks as a mask. The method and system also include providing a lightly doped source and drain implant and a N+ source and drain implant. The source connection implant is for connecting a portion of the plurality of sources. The second source and drain implant uses the plurality of gate stacks as a mask. Moreover, CoSi formed on the source region provides a lower resistence for lines connecting the sources, allowing a lower dose to be used for the N+ source and drain implant.
Claims10
A method for providing a semiconductor device including a substrate, the method comprising the steps of:
- (a) providing a plurality of gate stacks;
- (b) providing a source and drain halo implant using the plurality of gate stacks as a mask;
- (c) providing a lightly doped source and drain implant using the plurality of gate stacks as a mask after the step of providing the source and drain halo implant;
- (d) providing a N+ source and drain implant using the plurality of gate stacks as a mask;
- and
- (e) performing a self-aligned source etch before the lightly doped source and drain implant is provided in step (c).
A method for providing a semiconductor device comprising the steps of:
- providing a plurality of gate stacks;
- providing a source and drain halo implant using said plurality of gate stacks as a mask;
- providing a first plurality of spacers at the edges of each of said plurality of gate stacks;
- and
- providing a lightly doped source and drain implant using said plurality of gate stacks as a mask after providing said first plurality of spacers at the edges of each of said plurality of gate stacks.
Dependencies are inferred from the claim text.