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US 6,806,151 B2Granted
Methods and apparatus for inducing stress in a semiconductor device
AssigneeTexas Instruments Incorporated
InventorsChristoph Wasshuber, Keith A. Joyner
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Abstract
Methods and apparatus are disclosed for selectively inducing stress in a semiconductor device, wherein a first region of a substrate is implanted so as to induce stress in a second region. An electrical device is formed at least partially in the second region, wherein the induced stress therein may improve one or more operational characteristics of the device, such as channel region carrier mobility.
Claims6
A method for forming a MOS transistor having a stressed region, comprising:
- providing a semiconductor;
- forming a MOS transistor source region in said semiconductor;
- forming a MOS transistor drain region in said semiconductor;
- forming a MOS channel region in said semiconductor between said source region and said drain region;
- and
- implanting a species in said semiconductor beneath said MOS transistor channel region so as to form a stressed region comprising a portion of said MOS transistor channel region.
3 more elements
A method for forming a MOS transistor having a stressed region, comprising:
- providing a semiconductor;
- forming a MOS transistor source region in said semiconductor;
- forming a MOS transistor drain region in said semiconductor;
- forming a MOS channel region in said semiconductor between said source region and said drain region;
- and
- implanting a species in said semiconductor confined to a region substantially beneath said MOS transistor channel region so as to form a stressed region comprising a portion of said MOS transistor channel region.
3 more elements
Dependencies are inferred from the claim text.