Method and apparatus for suppressing the channeling effect in high energy deep well implantation
AssigneeAdvanced Micro Devices, Inc.
InventorsBin Yu, Che-Hoo Ng
Life of this patent
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Abstract
The invention provides an improved well structure for electrically separating n-channel and p-channel MOSFETs. The invention first forms a shallow well in a substrate. A buried amorphous layer is then formed below the shallow well. A deep well is then formed below the buried amorphous layer. The substrate is then subjected to a rapid thermal anneal to recrystallize the buried amorphous layer. The well structure is formed by the shallow well and the deep well. A conventional semiconductor device may then be formed above the well structure. The buried amorphous layer suppresses the channeling effect during the forming of the deep well without requiring a tilt angle.
Claims8
A method for fabricating a semiconductor device, said method comprising steps of:
- forming a shallow well layer by subjecting a semiconductor substrate to a shallow well implant with a substantially zero degree tilt;
- forming a buried amorphous layer below said shallow well layer by subjecting said semiconductor substrate to an amorphization implant with a substantially zero degree tilt;
- forming a deep well layer below said buried amorphous layer by subjecting said semiconductor substrate to a deep well implant with a substantially zero degree tilt.
A method for fabricating a semiconductor device, said method comprising steps of:
- forming a shallow well layer by subjecting a semiconductor substrate to a shallow well implant with a substantially zero degree tilt;
- forming a buried amorphous layer below said shallow well layer by subjecting said semiconductor substrate to an amorphization implant with a substantially zero degree tilt;
- forming a deep well layer below said buried amorphous layer by subjecting said semiconductor substrate to a deep well implant with a substantially zero degree tilt, most of said deep well implant passing through most of said buried amorphous layer;
- said method of forming said semiconductor device avoiding axial channeling and exhibiting minimal implant distortion.
Dependencies are inferred from the claim text.