Method of fabricating a MIM capacitor using etchback

A method of fabricating a capacitor of a semiconductor device, the method comprising:

• depositing an insulating layer on a semiconductor substrate, the insulating layer having a substantially uniform composition:
• etching regions of an insulating layer to form an insulating layer pattern having an upper surface and a plurality of holes having inner walls on a semiconductor substrate, the plurality of holes extending through the insulating layer and exposing an upper surface of contact plugs to produce an intermediate structure;
• forming a conductive layer tbr capacitor lower electrodes on the entire surface of the intermediate structure to a thickness which does not completely fill the holes, the conductive layer being formed directly on the upper surface of the insulating layer;
• forming capacitor lower electrodes separated from each other by etching back portions of the conductive layer on upper surfaces of the insulating layer pattern using a plasma, the plasma including at least one gas capable of selectively chemically etching portions of the conductive layer from the upper surface of the insulating layer pattern and wherein distribution of the plasma is controlled so that only portions of the conductive layer on the upper surfaces of the insulating layer pattern are removed, wherein bias is applied to the semiconductor substrate to cause etch by-products occurring during the etch-back to be deposited on portions of the conductive layer on the inner walls of the holes and thereby protect the portions of the conductive layer on the inner walls of the holes from being etched-back;
• and
• sequentially forming a dielectric layer and an upper electrode on the lower electrodes.