Sidewall strap for complementary semiconductor structures and method of making same
AssigneeMicron Techonlogy, Inc.
InventorsJigish D. Trivedi, Todd R. Abbott, Zhongze Wang
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Abstract
Devices, structures, and methods for enhancing devices using dual-doped polycrystalline silicon are discussed. One aspect of the present invention includes a p-type strip having a top, a bottom, two sides, and two ends; an n-type strip having a top, a bottom, two sides, and two ends; and a conductive inhibitor strip that adjoins a portion of one of the two sides of the p-type strip and a portion of one of the two sides of the n-type strip so as to inhibit cross-diffusion between the p-type strip and the n-type strip while electrical connection between n-type and p-type polycrystalline silicon is maintained.
Claims23
A method for forming a semiconductor structure, comprising:
- forming at least one well from a semiconductor substance in a substrate;
- forming a gate structure over at least a portion of the well from dual-doped polycrystalline silicon, the gate structure having a boundary between the dual doping;
- forming at least one sideways strap that is strapped to a portion of the dual-doped polycrystalline silicon across the boundary and electrically isolated from the well, the sideways strap overlaying a region of the substrate;
- and
- forming active regions in the well and adjacent the gate structure, the active regions disposed from the sideways strap and the region the sideways strap overlays.
A method for forming a semiconductor structure, comprising:
- forming at least two active areas in a semiconductor substrate;
- forming a field positioned between the at least two active areas and defining a field region on the semiconductor substrate;
- forming a dual-doped polycrystalline silicon gate structure overlying the active areas and the field;
- and
- forming at least one sideways strap that is strapped to a sidewall surface of the dual-doped polycrystalline silicon gate structure over the field and within the field region, the sideways strap electrically isolated from the active areas.
A method for forming a semiconductor structure, comprising:
- forming in a substrate a p-type well having an active area for the conduction of electrons;
- forming in the substrate an n-type well having an active area for the conduction of holes;
- forming a dual-doped polycrystalline silicon strip that is situated over the active areas of the p-type and n-type wells, the dual-doped polycrystalline silicon strip having a p-type portion doped by acceptor impurities and an n-type portion doped by donor impurities adjoining the p-type portion;
- and
- forming an inhibitor strip electrically isolated from the active areas of the p-type and n-type wells that adjoins on at least one side of the dual-doped polycrystalline silicon strip to contact both the p-type portion of the dual-doped polycrystalline silicon strip and the n-type portion of the dual-doped polycrystalline silicon strip, the inhibitor strip positioned along the dual-doped polycrystalline silicon strip between the active areas of the p-type and n-type wells.
Dependencies are inferred from the claim text.