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US 6,806,132 B2Granted
Semiconductor device having two-layered charge storage electrode
AssigneeKabushiki Kaisha Toshiba
InventorsSeiichi Mori, Mitsuhiro Noguchi
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Abstract
A first insulation film, a first conductor film, and a cap are sequentially formed on a semiconductor substrate. The first insulation film, the first conductor film, and the cap, and the substrate are etched in the same pattern. A second insulation film is placed in that etched pattern. The cap is removed. A second conductor film is formed on the side face of the second insulation film.
Claims4
A manufacturing method of a nonvolatile memory comprising:
- sequentially forming a first insulation film, a first floating gate film, and a cap on a semiconductor substrate;
- etching the first insulation film, the first floating gate film, and the cap on the same pattern;
- filling a second insulation film in the pattern;
- removing the cap;
- and
- forming a second floating gate film on a side face of the second insulation film and a top face of the first floating gate film, and a top face at an outer side of the second floating gate is higher than a top face at an inner side of the second floating gate.
3 more elements
Dependencies are inferred from the claim text.