SnO2 ISFET device, manufacturing method, and methods and apparatus for use thereof
AssigneeNational Yunlin University of Science and Technology
InventorsJung-Chuan Chou, Yii Fang Wang
Life of this patent
Estimating the term…
Abstract
A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.
Claims8
A method for fabricating a SnO2 gate ISFET device, comprising steps of:
- providing a semiconductor substrate;
- forming a virtual gate on the semiconductor substrate to define the gate area of the ISFET;
- forming a source/drain in the semiconductor substrate beside the virtual gate;
- removing the virtual gate;
- forming a SnO2 gate in the gate area to form an ISFET.
Dependencies are inferred from the claim text.