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AssigneesSharp Kabushiki Kaisha, Nobuhiko Sawaki
InventorsNorikatsu Koide, Junji Yamamoto, Tsuyoshi Dohkita, Nobuhiko Sawaki, Yoshio Honda, Yousuke Kuroiwa, Masahito Yamaguchi
Estimating the term…
A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of openings with nitride semiconductor materials. A width between two adjacent openings of the plurality of openings of the mask layer is 10 μm or less.
A method for producing a semiconductor light emitting device, comprising the steps of:
A method for producing a semiconductor light emitting device, comprising the steps of:
A method for producing a semiconductor light emitting device, comprising the steps of:
A method for producing a semiconductor light emitting device, comprising the steps of:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Bodies: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within…
Inorganic light-emitting semiconductor devices having potential barriers
Term ended 13 Dec 2022 (estimated)
1. Field of the Invention
The present invention relates to a method for producing a semiconductor light emitting device, and specifically a method for producing a semiconductor light emitting device including a nitride semiconductor layer as a light emitting layer on a silicon substrate; and a semiconductor light emitting device produced by such a method.
2. Description of the Related Art
FIG. 1 is a schematic cross-sectional view of a semiconductor light emitting device according to a first example of the present invention;
FIG. 2 is a schematic plan view of the semiconductor light emitting device shown in FIG. 1;
FIG. 3 is a schematic isometric view of a laminate obtained during the production of the semiconductor light emitting device shown in FIG. 1;
Hereinafter, the present invention will be described by way of illustrative examples with reference to the accompanying drawings. In this specification, the term “column-like multi-layer structure” refers to a nitride semiconductor layer which is formed on a part of an Si substrate by epitaxial growth. The term “semiconductor light emitting device” refers to a light emitting device including at least one column-like multi-layer structure on the Si substrate.
FIG. 1 is a schematic cross-sectional view of a nitride semiconductor light emitting device 100 according to a first example of the present invention. FIG. 2 is a schematic plan view of the nitride semiconductor light emitting device 100. The nitride semiconductor light emitting device 100 includes an Si substrate 11 having a (111) plane and an insulating layer 31 provided on the Si substrate 11. The insulating layer 31 has an appropriate thickness and covers a surface of the Si substrate 11 except for portions on which a nitride is to be grown. The insulating layer 31 contains, for example, SiO2.
The insulating layer 31 has a plurality of openings 32 except in a position of at least one of the four corners thereof. In each of the openings 32, a column-like multi-layer structure 20 is formed by growing a nitride semiconductor material. The openings 32 pass through the insulating layer 31 so as to expose the surface of the Si substrate 11. The openings 32 are square, and are provided in a matrix in an Si <11-2> direction and an Si <1-10> direction in which the nitride semiconductor material is crystal-grown in the openings 32. The <11-2> direction and the <1-10> direction are perpendicular to each other.