High brightness light emitting diode

A method for producing a high brightness light emitting diode, comprising steps of:

• a) providing a temporary substrate for epitaxing;
• b) sequentially epitaxing an n-type cladding layer, an active layer with quantum well structure and a p-type cladding layer on said temporary substrate;
• c) forming a p-GaP layer on said p-type cladding layer;
• d) forming a metal contact layer on said p-GaP layer;
• e) etching a part of said metal contact layer, said p-GaP layer, said p-type cladding layer and said active layer, and an upper part of said n-type cladding layer to expose said n-type cladding layer;
• f) forming a p-type ohmic contact electrode and an n-type ohmic contact electrode on said metal contact layer and said exposed n-type cladding layer to complete a main structure of said light emitting diode;
• g) bonding a glass substrate to an surface of said main structure on which with said electrodes are present;
• h) removing said temporary substrate;
• i) forming a reflective mirror on a bottom surface of said n-type cladding layer;
• j) bonding a permanent substrate to a bottom surface of said reflective mirror;
• and
• k) removing said glass substrate.