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US 6,806,111 B1Granted
Semiconductor component and method of manufacture
AssigneeAdvanced Micro Devices, Inc.
InventorsEdward E. Ehrichs, Mark B. Fuselier
Life of this patent
Estimating the term…
Abstract
A semiconductor component having an optical interconnect formed thereover and a method for manufacturing the semiconductor component. The semiconductor component has a transistor coupled to a light emitting device and another transistor coupled to a light detecting device by a metallization system. The light emitting device is optically coupled to the light detecting device by an optical interconnect formed over the transistors and the metallization system.
Claims17
A method for manufacturing a semiconductor component, comprising:
- providing a semiconductor substrate having a major surface;
- forming a first semiconductor device from the semiconductor substrate;
- forming a metallization system over the major surface;
- forming a light emitting device from or over the semiconductor substrate;
- forming a light detecting device from or over the semiconductor substrate;
- and
- forming an optical interconnect over the major surface, wherein the optical interconnect includes a light transmission path for coupling the light emitting device to the light detecting device, wherein the metallization system is vertically positioned between the major surface and the optical interconnect, and wherein the semiconductor device is electrically coupled to at least one of the light emitting device and the light detecting device.
4 more elements
A method for manufacturing a semiconductor component, comprising:
- providing a semiconductor substrate having a major surface;
- forming first and second semiconductor devices from the semiconductor substrate;
- forming a light emitting device, wherein the light emitting device is electrically coupled to the first semiconductor device;
- forming a light detecting device, wherein the light detecting device is electrically coupled to the second semiconductor device;
- forming a metallization system over the first and second semiconductor devices, and
- forming an optical interconnect over the major surface, wherein the optical interconnect optically couples the light emitting device to the light detecting device, wherein the metallization system is vertically positioned between the first and second semiconductor devices and the optical interconnect, and wherein the light emitting device and the light detecting device are laterally spaced apart by at least 100 microns.
3 more elements
Dependencies are inferred from the claim text.