Method of measuring meso-scale structures on wafers
AssigneeTherma-Wave, Inc.
InventorsKenneth C. Johnson, Fred E. Stanke
Life of this patent
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AssigneeTherma-Wave, Inc.
InventorsKenneth C. Johnson, Fred E. Stanke
Estimating the term…
A method of measuring at least one parameter associated with a portion of a sample having formed thereon one or more structures with at least two zones each having an associated zone reflectance property. The method includes the steps of illuminating the zones with broadband light, and measuring at least one reflectance property of light reflected from the at least two zones. The measurement includes a substantial portion of non-specularly scattered light, thereby increasing the quality of the measurement. The method further includes the step of fitting a parameterized model to the measured reflectance property. The parameterized model mixes the zone reflectance properties of the zones to account for partially coherent light interactions between the two zones.
A test structure for use in the optical monitoring of erosion on a wafer, said test structure comprising:
A method of monitoring erosion caused by polishing a semiconductor wafer comprising the steps of:
Dependencies are inferred from the claim text.