Method for fabricating semiconductor devices that uses efficient plasmas
AssigneeTexas Instruments Incorporated
InventorsTing Tsui, Andrew John McKerrow, Yuji Richard Kuan
Life of this patent
Estimating the term…
Abstract
The present invention provides, in one embodiment, process of treating a target semiconductor surface. The process includes exposing a test surface to a plasma protocol (110), and measuring chemical changes in discrete locations of the test surface (120). The process further includes preparing a target surface by exposing the target surface to the plasma protocol (140) when a uniformity of the chemical changes are within a performance criterion of the plasma protocol (130). Other embodiments advantageously incorporate this process into methods for making semiconductor devices and integrated circuits.
Claims17
A process of treating a target semiconductor surface, comprising:
- providing a predetermined target range of measured changes on a test surface;
- exposing said test surface to a plasma protocol;
- measuring chemical changes in locations of said test surface;
- and
- preparing a target surface comprising a metal oxide by exposing said target surface to said plasma protocol when said range of measured changes are within said predetermined target range.
A process of treating a target semiconductor surface, comprising:
- providing a predetermined target range of measured changes on a test surface;
- exposing said a test surface to a plasma protocol;
- measuring chemical changes in locations of said test surface;
- and
- preparing a target surface comprising a metal silicide by exposing said target surface to said plasma protocol when said range of measured changes are within said predetermined target range.
A semiconductor device produced by the process including:
- providing a predetermined target range of chemical changes on a test surface;
- treating a target surface comprising a metal oxide with a plasma protocol comprising:
- exposing a test surface to a plasma protocol;
- measuring chemical changes in discrete locations of said test surface;
- and
- exposing said target surface to said plasma protocol when said chemical changes are within said predetermined target range;
- and
- depositing a dielectric layer on said target surface.
A method of manufacturing an integrated circuit, comprising:
- providing a predetermined target range of chemical changes on a test surface;
- forming an active device over a semiconductor substrate;
- forming an interconnect metal structure over said active device, including;
- treating said interconnect metal structure comprising:
- exposing a test surface to a plasma protocol;
- measuring chemical changes on said test surface;
- and
- exposing said interconnect metal structure to said plasma protocol to remove oxides or contaminants from said interconnect metal structure when said chemical changes are within said predetermined target range;
- connecting said interconnect metal structure to said active device to form an operative integrated circuit.
Dependencies are inferred from the claim text.