Process for producing polycrystalline silicon film by crystallizing on amorphous silicon film by light irradiation
AssigneeHitachi, Ltd.
InventorsKazuo Takeda, Masakazu Saito, Yukio Takasaki, Hironobu Abe, Makoto Ohkura, Yoshinobu Kimura, Takeo Shiba
Life of this patent
Estimating the term…
Abstract
The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
Claims3
A process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film formed on a substrate with scanning the substrate;
- a step of measuring the grain size of said polycrystal silicon film by determining the poly-silicon grain size by measuring a diffraction pattern;
- and a step of adjusting the energy of said light irradiation on the basis of said grain size,
- wherein said determining the poly-silicon grain size by measuring said light diffraction pattern comprises irradiating the substrate sample with a light beam having a wavelength of less than 540 nm, measuring the angle dependency of scattered light intensity at least in an angle range of 5° to 40° from an axis of the irradiating light beam, and determining the grain size from the thus obtained information on the angular distribution.
Dependencies are inferred from the claim text.