Method for manufacturing a polysilicon type thin film transistor
AssigneeSamsung Electronics Co., Ltd.
InventorChun-Gi You
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Abstract
A method for manufacturing a polysilicon type thin film transistor comprises the steps of forming a polysilicon layer on a substrate, forming a gate insulating layer on the polysilicon layer, forming a gate layer on the gate insulating layer, forming a gate pattern by patterning, implanting impurities in the substrate over which the gate pattern is formed, forming a cover layer over the substrate in which impurities are implanted, and thermally annealing the substrate over which the cover layer is formed. In the invention, the thermal annealing is carried out instead of a costly laser annealing after the impurity implantation.
Claims20
A method for manufacturing a polysilicon type thin film transistor, comprising steps of:
- forming a polysilicon layer on a substrate;
- forming a gate insulating layer on the polysilicon layer;
- forming a photoresist layer;
- forming a gate pattern on the gate insulating layer;
- forming a gate insulating layer pattern;
- implanting impurities using the photoresist layer, the gate pattern and the gate insulating layer pattern as a mask to form source/drain regions;
- forming a rover layer;
- and
- annealing the substrate thermally.
Dependencies are inferred from the claim text.