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US 6,806,029 B2Granted
Pattern formation material and pattern formation method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShinji Kishimura, Masayuki Endo, Masaru Sasago, Mitsuru Ueda, Tsuyohiko Fujigaya
Life of this patent
Estimating the term…
Abstract
A pattern formation material of this invention contains a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group and an alkyl group including a fluorine atom; R3 is a protecting group released by an acid; m is an integer of 0 through 5; and a and b satisfy 0<a<1,0<b<1 and 0<a+b≦1.
Claims28
A pattern formation material comprising:
- a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2;
- and an acid generator:
- wherein R1 and R2 are the same or different and selected from the group consisting of a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group and an alkyl group including a fluorine atom;
- R3 is a protecting group released by an acid;
- m is an integer of 0 through 5;
- and a and b satisfy 0<a<1,0<b<1 and 0<a+b≦1.
3 more elements
A pattern formation material comprising:
- a base polymer including a first unit represented by Chemical Formula 1, a second unit represented by Chemical Formula 2 and a third unit represented by Chemical Formula 3;
- and an acid generator:
- wherein R1, R2 and R4 are the same or different and selected from the group consisting of a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group and an alkyl group including a fluorine atom;
- R3 is a protecting group released by an acid;
- m and n are integers of 0 through 5;
- and a, b and c satisfy 0<a<1,0<b<1,0<c<1 and 0<a+b+c≦1.
3 more elements
A pattern formation material comprising:
- a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 4;
- and an acid generator:
- wherein R1 is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom;
- R5 is a protecting group released by an acid;
- p is an integer of 0 through 5;
- and a and d satisfy 0<a<1,0<d<1 and 0<a+d≦1.
3 more elements
A pattern formation material comprising:
- a base polymer including a first unit represented by Chemical Formula 1, a second unit represented by Chemical Formula 4 and a third unit represented by Chemical Formula 5;
- and an acid generator:
- wherein R1 is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom;
- R5 is a protecting group released by an acid;
- p and q are integers of 0 through 5;
- and a, d and e satisfy 0<a<1,0<d<1,0<e<1 and 0<a+d+e≦1.
3 more elements
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a pattern formation material containing a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator:
- wherein R1 and R2 are the same or different and selected from the group consisting of a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group and an alkyl group including a fluorine atom;
- R3 is a protecting group released by an acid;
- m is an integer of 0 through 5;
- and a and b satisfy 0<a<1,0<b<1 and 0<a+b≦1;
- irradiating said resist film with exposing light of a wavelength not longer than a 180 nm band for pattern exposure;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
5 more elements
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a pattern formation material containing a base polymer including a first unit represented by Chemical Formula 1, a second unit represented by Chemical Formula 2 and a third unit represented by Chemical Formula 3, and an acid generator;
- wherein R1, R2 and R4 are the same or different and selected from the group consisting of a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group and an alkyl group including a fluorine atom;
- R3 is a protecting group released by an acid;
- m and n are integers of 0 through 5;
- and a, b and c satisfy 0<a<1,0<b<1,0<c<1 and 0<a+b+c≦1;
- irradiating said resist film with exposing light of a wavelength not longer than a 180 nm band for pattern exposure;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
5 more elements
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a pattern formation material containing a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 4, and an acid generator:
- wherein R1 is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom;
- R5 is a protecting group released by an acid;
- p is an integer of 0 through 5;
- and a and d satisfy 0<a<1,0<d<1 and 0<a+d≦1;
- irradiating said resist film with exposing light of a wavelength not longer than a 180 nm band for pattern exposure;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
5 more elements
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a pattern formation material containing a base polymer including a first unit represented by Chemical Formula 1, a second unit represented by Chemical Formula 4 and a third unit represented by Chemical Formula 5, and an acid generator:
- wherein R1 is a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom;
- R5 is a protecting group released by an acid;
- p and q are integers of 0 through 5;
- and a, d and e satisfy 0<a<1,0<d<1,0<e<1 and 0<a+d+e≦1;
- irradiating said resist film with exposing light of a wavelength not longer than a 180 nm band for pattern exposure;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
5 more elements
Dependencies are inferred from the claim text.