Chemically amplified photoresist and process for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography through the use of fluorinated cinnamic acid derivatives
AssigneeInfineon Technologies AG
InventorsChristoph Hohle, Jörg Rottstegge, Christian Eschbaumer, Michael Sebald
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Abstract
Chemically amplified photoresists exhibit increased transparency at a wavelength of 157 nm. The chemically amplified photoresist includes a polymer containing first repeating units derived from a cinnamic acid or a cinnamic ester, which are at least monofluorinated or substituted by fluoroalkyl groups. Processes for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography using fluorinated cinnamic acid derivatives are also included.
Claims14
A chemically amplified photoresist, comprising:
- a polymer containing acid-labile groups to be eliminated by an acid and polar groups liberated by said acid-labile groups after exposure to the acid, said polar groups upon being liberated increasing solubility of said polymer in aqueous alkaline developers, said polymer having repeating units derived from the group consisting of monofluorinated cinnamic acid, cinnamic acid substituted by fluoroalkyl groups, monofluorinated cinnamic esters, and cinnamic esters substituted by fluoroalkyl groups;
- a photoacid generator;
- and
- a solvent.
A process for structuring substrates, which comprises:
- coating a substrate with a photoresist to produce a photoresist film, the photoresist including a polymer containing acid-labile groups to be eliminated by an acid and polar groups liberated by the acid-labile groups after exposure to the acid, the polar groups upon being liberated increasing solubility of the polymer in aqueous alkaline developers, the polymer having repeating units derived from the group consisting of monofluorinated cinnamic acid, cinnamic acid substituted by fluoroalkyl groups, monofluorinated cinnamic esters, and cinnamic esters substituted by fluoroalkyl groups, a photoacid generator, and a solvent;
- exposing sectionally the photoresist film to light having a wavelength less than 200 nm;
- developing the exposed photoresist film to form a structure from the developed photoresist;
- and
- transferring the structure to the substrate.
Dependencies are inferred from the claim text.