Photoresist composition

A method of patterning a substrate, said method comprising applying a photoresist composition to the substrate, the photoresist composition comprising a polymer, said polymer said polymer comprising at least one acrylate or methacrylate monomer having a formula:

• where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons;
• and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group;
• and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic group;
• and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group, thereby forming a film;
• patternwise exposing the film to an imaging radiation source;
• and
• developing areas of the film to form a patterned substrate.